C4883

2SC4883/4883A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A) sAbsolute maximum ratings (Ta=25°C) Symbol 2SC4883 2SC4883A VCBO VCEO VEBO IC IB PC Tj Tstg 150 150 6 2 1 20(Tc=25°C) 150 –55 to +150 180 180 Unit V V V A A W °C °C IEBO V(BR)CEO hFE VCE(sat) fT COB VEB=6V IC=10mA VCE=10V, IC=0.7A IC=0.7A, IB=70mA VCE=12V, IE=–0.7A VCB=10V, f=1MHz Application : Audio Output Driver and TV Velocity-modulation (Ta=25°C) 2SC4883 2SC4883A Unit sElectrical Characteristics Symbol ICBO VCB= 150 10max 150min Conditions External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 10max 180 180min µA µA V V MHz pF 13.0min 16.9±0.3 8.4±0.2 V 60 to 240 1.0max 120typ 30typ 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 www.DataSheet4U.com sTypical Switching Characteristics (Common Emitter) VCC (V) 20 RL (Ω) 20 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 100 IB2 (mA) –100 ton (µs) 0.5typ tstg (µs) 1.5typ tf (µs) 0.5typ 2.54 3.9 B C E I C – V CE Characteristics (Typical) 2 V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) 3 I C – V BE Temperature Characteristics (Typical) 2 (V CE =4V) 100mA 60mA 30m A 15m A Collector Current I C (A) 10m A 2 Collector Current I C (A) 1 1 ) Temp) –55˚C (Case eT Cas 1 ˚C ( I C =2A 0.5A 0 2 5 10 50 1A 100 500 1000 0 0 0 0 2 4 6 8 10 0.5 Base-Emittor Voltage V B E (V) 25˚C 125 (Cas e Te mp) I B =5mA emp ±0.2 0.8±0.2 a b ø...