Document
SKM 100GB125DN
SEMITRANS® 2N Ultra Fast IGBT Module
SKM 100GB125DN
Features
! " #
$%
&$' &
$
' (
)*+ ,
)-+ ,
Typical Applications*
. -+ /0
1
#
*++ /0 #
2
. -+ /0
Absolute Maximum Ratings
Symbol Conditions
IGBT
6$2
$
(7 3 -4 5$ (7 3 *4+ 5$
$1:
$1:3- $
6;2
6$$ 3 ++ 6= 6;2 > -+ 6=
6$2 ? *-++ 6
Inverse Diode
!
(7 3 *4+ 5$
!1:
!:
Module
)1:,
(#7 ( 6
!1:3- ! 3 *+ = B
%$ * B
( 3 -4 5$
Values
Units
(
3 -4 5$ (
3 94 5$
(7 3 *-4 5$
*-++
6
*++
%
9+
%
*4+
%
< -+
6
*+
@
(
3 -4 5$ (
3 9+ 5$
(7 3 *4+ 5$
A4
%
4
%
*4+
%
C-+
%
-++
%
D E+ BBB F *4+
5$
*-4
5$
E+++
6
Characteristics
Symbol Conditions
IGBT
6;2),
$2
6;2 3 6$2 $ 3 - % 6;2 3 + 6 6$2 3 6$2
6$2+
$2
6;2 3 *4 6
6$2), $
$
$
I;
1; ) , 2 ) , 2
1)7D,
$ 3 C4 % 6;2 3 *4 6 6$2 3 -4 6;2 3 + 6 6;2 3 + D F-+6 (7 3 5$ 1; 3 9 G 1; 3 9 G
;'(
( 3 -4 5$
min. typ. max. Units
(7 3 -4 5$ (7 3 *-4 5$ (7 3 -4 5$ (7 3 *-4 5$ (7 3 -45$ (7 3 *-45$ (7 3 5$
#B
3 * :0
6$$ 3 ++6 $3 C4% (7 3 *-4 5$ 6;2 3 < *46
E 4
4 4
4
6
+ *4
+ E4
%
%
6
6
G
G
H H
H 94
6
4
!
+ C-
+ A
!
+ H9
+ 4
!
4+
$
4
J
9+
E+
A
K
H+
-+
H 4
K
+ *9 LMN
GB
1
02-08-2012 DIL
© by SEMIKRON
SKM 100GB125DN
SEMITRANS® 2N Ultra Fast IGBT Module
SKM 100GB125DN
Features
! " #
$%
&$' &
$
' (
)*+ ,
)-+ ,
Characteristics
Symbol Conditions
Inverse Diode
6! 3 62$
! 3 C4 %= 6;2 3 + 6
6!+
!
11:
I 2
1)7D,&
Module
$2 1$$OF22O
! 3 C4 % M 3 9++ %M@ 6;2 3 + 6= 6$$ 3 ++ 6
B
D
1)D, : :
/ :
:4
min.
(7 3 -4 5$
#B (7 3 *-4 5$
#B (7 3 -4 5$ (7 3 *-4 5$ (7 3 -4 5$ (7 3 *-4 5$ (7 3 *-4 5$
(
3 -4 5$ (
3 *-4 5$
H - 4
typ.
* 9 * *
*-
4+ ** 4
E
-+ + C4
*
max. Units
- 4
6
6
* -
6
6
*C H
G
G
% @$
K
+ 4
LMN
-4
G
G
+ +4 LMN
4
4
*+
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
Typical Applications*
. -+ /0
1
#
*++ /0 #
2
. -+ /0
GB
2
02-08-2012 DIL
© by SEMIKRON
SKM 100GB125DN
SEMITRANS® 2N Ultra Fast IGBT Module
SKM 100GB125DN
Zth Symbol
Zth(j-c)l
1 1 1 1
Zth(j-c)D
1 1 1 1
Conditions
3* 33H 3E 3* 33H 3E
3* 33H 3E 3* 33H 3E
Features
! " #
$%
&$' &
$
' (
)*+ ,
)-+ ,
Typical Applications*
. -+ /0
1
#
*++ /0 #
2
. -+ /0
Values
A4 4 *C 4 - 4 + +H-C + ++9 + ++*C + ++9
H++ *+ H E + +4E + ++* + ++*4 + *
Units
/MN /MN /MN /MN
/MN /MN /MN /MN
GB
3
02-08-2012 DIL
© by SEMIKRON
SKM 100GB125DN
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
4
Fig. 6 Typ. gate charge characteristic
02-08-2012 DIL
© by SEMIKRON
SKM 100GB125DN
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
02-08-2012 DIL
© by S.