Document
SKM 100GD063DL
Absolute Maximum Ratings Symbol Conditions IGBT
:; 5 1 23 4 5 1 -3. 4 :;12( 1 23 4 1 8. 4
1 234&
$ ) Values
'.. -7. 93 2.. < 2.
Units
* * * @
SEMITRANS® 6 Superfast NPT-IGBT www.DataSheet4U.com Module
SKM 100GD063DL
1 7.. = > 2. = ? '.. 5 1 -3. 4 +:;12(+
5 1 -23 4
-.
Inverse Diode
+ +:; +; 1 23 4 1 8. 4
-.. A3 2..
* * * * *
1 -. = B
5 1 -3. 4
A2.
Module
:; 5 " C D. BBB E-3. C D. BBB E-23 *& - B 23.. 4 4
Features
!"
#$%& $ $ " ' (
$
Characteristics Symbol Conditions IGBT
. G ) ) : 5C 1 .BBB-3 : 1 -. F : 1 -. F 1 -3 1 & 1 7 * 1 . & 1
1 234&
$ ) min.
D&3 5 1 23 4 5 1 23 4 5 1 -23 4 5 1 234 5 1 -234
typ.
3&3 .&-3 -&.3 -.&3 -D 2&2&D 3&' .&' .&D 2D. 3. D. D 7.. 73 7
max.
'&3 .&D3
Units
* F F
Typical Applications ) )
$ *
) $ + , -. /!0
1 -.. *& 1 -3 5 1 234$ B
2&3 2&8
+ + + H H
5 1 -234$ B 1 23& 1 . 1 - ;!0
1 7.. 1 -..* 5 1 -23 4 1 < -3
.&2A
IJK
GD
1
05-09-2006 SEN
© by SEMIKRON
SKM 100GD063DL
Characteristics Symbol Conditions Inverse Diode
+ 1 +. + ::; G : 5CL + 1 -.. * )J) 1 -... *J@ 1 C-3 = 1 '.. )) +
min.
5 1 23 4$ B 5 1 -23 4$ B 5 1 23 4 5 1 23 4 5 1 -23 4
typ.
-&33 -&33
max.
-&9 .&9 -.
Units
F * @ H
1 -.. *= 1 .
SEMITRANS® 6 Superfast NPT-IGBT www.DataSheet4U.com Module
SKM 100GD063DL
8 DD -&3 .&' '.
IJK ! IJK "
Module
M : C ; )
$ / ;3 D .&.3 3 -A3
Features IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
!"
#$%& $ $ " ' (
This is an electrostatic discharge sensitive device (ESDS), international standard
characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
Typical Applications ) )
$ *
) $ + , -. /!0
GD
2
05-09-2006 SEN
© by SEMIKRON
SKM 100GD063DL
www.DataSheet4U.com
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
05-09-2006 SEN
© by SEMIKRON
SKM 100GD063DL
www.DataSheet4U.com
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT and Diode
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL recovered charge
4
05-09-2006 SEN
© by SEMIKRON
SKM 100GD063DL
UL recognized file no E 63 532
www.DataSheet4U.com
L '8
L
'8
5
05-09-2006 SEN
© by SEMIKRON
.