IRG4PC30KDPBF

PD -95557 IRG4PC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE tsc =10µs, @360V VCE (start), T J = 125°C, www.DataSheet4U.com VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Lead-Free Short Circuit Rated UltraFast IGBT C • High short circuit rating optimized for motor control, Features VCES = 600V G E VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A n-channel • Latest generation 4 IGBTs offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses • This part replaces the IRGBC30KD2 and IRGBC30MD2 products • For hints see design tip 97003 Benefits TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 28 1...