P45N03LTG

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P45N03LTG TO-220 Lead Free D PRODUCT SUMMARY V(BR)DSS 25 www.DataSheet4U.com RDS(ON) 20m ID 45A G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 Power Dissipation L = 0.1mH L = 0.05mH TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1 2 1 1 SYMBOL VGS LIMITS ±20 45 28 140 20 140 5.6 65 33 -55 to 150 275 UNITS V TC = 25 °C TC = 100 °C ID IDM IAR EAS EAR PD Tj, Tstg TL A mJ W °C SYMBOL RθJC RθJA RθCS TYPICAL MAXIMUM 3 70 UNITS °C / W 0.7 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C 25 0.8 1.2 2.5 ±250 25 250 nA µA V LIMITS UNIT MIN TYP MAX 1 AUG-13-2004 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P45N03LTG TO-220 Lead Fre...