AS7C33512PFD18A

November 2004 ® AS7C33512PFD18A 3.3V 512K × 18 pipeline burst synchronous SRAM Features Organization: 524,288 words × 18 bits Fast clock speeds to 166 MHz Fast clock to data access: 3.5/4.0 ns Fast OE access time: 3.5/4.0 ns Fully synchronous register-to-register operation Dual-cycle deselect Asynchronous output enable control www.DataSheet4U.com Individual byte write and global write Available in 100-pin TQFP package Linear or interleaved burst control Snooze mode for reduced power-standby Common data inputs and data outputs Byte write enables Multiple chip enables for easy expansion 3.3V core power supply 2.5V or 3.3V I/O operation with separate VDDQ Logic block diagram LBO CLK ADV ADSC ADSP A[18:0] CLK CS CLR Burst logic 19 17 19 19 Q D CS Address register CLK 512K × 18 Memory array 18 18 GWE BWb BWE BWa CE0 CE1 CE2 D DQb Q CLK D DQa Q Byte Write registers Byte Write registers CLK D 2 OE CE CLK ZZ Enable register Q Output registers CLK Input registers CLK Power down D Enable Q delay register CLK OE 18 DQ[a,b] Selection guide –166 Minimum cycle time Maximum clock frequency Maximum clock access time Maximum operating current Maximum standby current Maximum CMOS standby current (DC) 6 166 3.5 475 130 30 –133 7.5 133 4 425 100 30 Units ns MHz ns mA mA mA 12/1/04; v.1.3 Alliance Semiconductor 1 of 20 Copyright © Alliance Semiconductor. All rights reserved. AS7C33512PFD18A ® 8 Mb Synchronous SRAM products list1,2 Org ...