TRIPLE BUFFER. 74V2T70 Datasheet

74V2T70 BUFFER. Datasheet pdf. Equivalent


STMicroelectronics 74V2T70
74V2T70
TRIPLE BUFFER
s HIGH SPEED: tPD = 3.6ns (TYP.) at VCC = 5V
s LOW POWER DISSIPATION:
www.DataSheet4U.csomICCOC M=P1AµTAI(BMLAEXW.)IaTtHTATT=L2O5°UCTPUTS:
VIH = 2V (MIN), VIL = 0.8V (MAX)
s POWER DOWN PROTECTION ON INPUT
s SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 8mA (MIN) at VCC = 4.5V
s BALANCED PROPAGATION DELAYS:
tPLH tPHL
s OPERATING VOLTAGE RANGE:
VCC(OPR) = 4.5V to 5.5V
s IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V2T70 is an advanced high-speed CMOS
TRIPLE BUFFER fabricated with sub-micron
silicon gate and double-layer metal wiring C2MOS
technology.
SOT23-8L
ORDER CODES
PACKAGE
SOT23-8L
T&R
74V2T70STR
The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on input and 0
to 7V can be accepted on input with no regard to
the supply voltage. This device can be used to
interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
June 2003
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74V2T70 Datasheet
Recommendation 74V2T70 Datasheet
Part 74V2T70
Description TRIPLE BUFFER
Feature 74V2T70; 74V2T70 TRIPLE BUFFER HIGH SPEED: tPD = 3.6ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MA.
Manufacture STMicroelectronics
Datasheet
Download 74V2T70 Datasheet




STMicroelectronics 74V2T70
74V2T70
INPUT EQUIVALENT CIRCUIT
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PIN DESCRIPTION
PIN No
1, 3, 6
7, 5, 2
4
8
SYMBOL
1A, 2A, 3A
1Y, 2Y, 3Y
GND
VCC
NAME QND FUNCTION
Data Inputs
Data Outputs
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
A
L
H
Y
L
H
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC Supply Voltage
VI DC Input Voltage
VO DC Output Voltage
IIK DC Input Diode Current
IOK DC Output Diode Current
IO DC Output Current
ICC or IGND DC VCC or Ground Current
Tstg Storage Temperature
TL Lead Temperature (10 sec)
-0.5 to +7.0
-0.5 to +7.0
-0.5 to VCC + 0.5
- 20
± 20
± 25
± 50
-65 to +150
260
V
V
V
mA
mA
mA
mA
°C
°C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC
VI
VO
Top
dt/dv
Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Input Rise and Fall Time (note 1) (VCC = 5.0 ± 0.5V)
1) VIN from 0.8V to 2V
Value
4.5 to 5.5
0 to 5.5
0 to VCC
-55 to 125
0 to 20
Unit
V
V
V
°C
ns/V
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STMicroelectronics 74V2T70
74V2T70
DC SPECIFICATIONS
Test Condition
Value
Symbol
Parameter
VIH
VIL
www.DataSheet4U.comVOH
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
VOL Low Level Output
Voltage
II
ICC
+ICC
Input Leakage
Current
Quiescent Supply
Current
Additional Worst
Case Supply
Current
VCC
(V)
4.5 to
5.5
4.5 to
5.5
4.5
4.5
4.5
4.5
0 to
5.5
IO=-50 µA
IO=-8 mA
IO=50 µA
IO=8 mA
VI = 5.5V or GND
5.5 VI = VCC or GND
One Input at 3.4V,
5.5 other input at VCC
or GND
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
2 22V
0.8 0.8 0.8 V
4.4 4.5 4.4 4.4
V
3.94 3.8 3.7
0.0 0.1 0.1 0.1 V
0.36 0.44 0.55
± 0.1
± 1.0
± 1.0 µA
1 10 20 µA
1.35 1.5
1.5 mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns)
Test Condition
Value
Symbol
Parameter
VCC CL
(V) (pF)
tPLH Propagation Delay
tPHL Time
(*) Voltage range is 5.0V ± 0.5V
5.0 (*)
5.0 (*)
15
50
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min.
Typ.
3.6
4.0
Max.
6.0
6.5
Min.
1.0
1.0
Max.
7.0
7.5
Min. Max.
1.0 8.0
1.0 8.5
ns
CAPACITIVE CHARACTERISTICS
Test Condition
Value
Symbol
Parameter
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
CIN Input Capacitance
4 10 10 10 pF
CPD Power Dissipation
Capacitance
(note 1)
14
pF
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/3
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