Document
BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS
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Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C 80 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 750 at 3V, 5 A
B C E
TO-220 PACKAGE (TOP VIEW)
1 2 3
Pin 2 is in electrical contact with the mounting base.
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MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING BDW93 Collector-base voltage (IE = 0) BDW93A BDW93B BDW93C BDW93 Collector-emitter voltage (IB = 0) BDW93A BDW93B BDW93C Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Operating junction temperature range Storage temperature range Operating free-air temperature range NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot Tj Tstg TA VCEO V CBO SYMBOL VALUE 45 60 80 100 45 60 80 100 5 12 0.3 80 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT
PRODUCT
INFORMATION
1
SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BDW93 V(BR)CEO IC = 100 mA IB = 0 (see Note 3) BDW93A BDW93B BDW93C VCB = 40 V ICEO Collector-emitter cut-off current VCB = 60 V VCB = 80 V VCB = 80 V VCB = 45 V VCB = 60 V IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = IC = IC = IC = IB = 0 IB = 0 3A (see Notes 3 and 4) 5A 5A 5A (see Notes 3 and 4) (see Notes 3 and 4) 1000 100 750 20000 2 3 2.5 4 2 4 V V V TC = 150°C TC = 150°C TC = 150°C TC = 150°C BDW93 BDW93A BDW93B BDW93C BDW93 BDW93A BDW93B BDW93C BDW93 BDW93A BDW93B BDW93C MIN 45 60 80 100 1 1 1 1 0.1 0.1 0.1 0.1 5 5 5 5 2 mA mA mA V TYP MAX UNIT
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ICBO Collector cut-off current
VCB = 80 V VCB = 100 V VCB = 45 V VCB = 60 V VCB = 80 V VCB = 100 V
IEBO
Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Parallel diode forward voltage
VEB = VCE = VCE = VCE = IB = IB = IE = IE =
5V 3V 3V 3V 20 mA 20 mA 5A 10 A
hFE
IC = 10 A
VCE(sat) VBE(sat) VEC
IB = 100 mA IB = 100 mA
IC = 10 A IC = 10 A
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER RθJC RθJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.56 62.5 UNIT °C/W °C/W
PRODUCT
2
INFORMATION
SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V 50000
TCS130AE
COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
3·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 2·5
TCS130AG
hFE - Typical DC Current Gain
TC = -40°C TC = 25°C TC = 100°C 10000
2·0
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1·5
1000
1·0
0·5
VCE = 3 V tp = 300 µs, duty cycle < 2% 100 0·5 1·0 IC - Collector Current - A 10 20
TC = -40°C TC = 25°C TC = 100°C 1·0 IC - Collector Current - A 10 20
0 0·5
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
3·0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40°C TC = 25°C TC = 100°C
TCS130AI
2·5
2·0
1·5
1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0·5 0·5 1·0 IC - Collector Current - A 10 20
Figure 3.
PRODUCT
INFORMATION
3
SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE
100 Ptot - Maximum Power Dissipation - W
TIS130AA
80
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60
40
20
0 0 25 50 75 100 125 150 TC - Case Temperature - °C
Figure 4.
PRODUCT
4
INFORMATION
SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS
MECHANICAL DATA TO-220 3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220 4,70 4,20 10,4 10,0 1,32 1,.