NAND GATE. 74V2T132 Datasheet

74V2T132 GATE. Datasheet pdf. Equivalent


STMicroelectronics 74V2T132
74V2T132
DUAL 2-INPUT SHMITT TRIGGER NAND GATE
s HIGH SPEED: tPD = 3.7 ns (TYP.) at VCC = 5V
s LOW POWER DISSIPATION:
ICC = 1 µA (MAX.) at TA = 25°C
www.DataSheet4U.csomTYPICAL HYSTERESIS: 0.8V at VCC = 4.5V
s SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 8 mA (MIN)
s BALANCED PROPAGATION DELAYS:
tPLH tPHL
s OPERATING VOLTAGE RANGE:
VCC(OPR) = 4.5V to 5.5V
s IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V2T132 is an advanced high-speed CMOS
SINGLE 2-INPUT NAND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C2MOS technology.
Pin configuration and function are the same as
those of the 74V2T00 but the 74V2T132 has
hysteresis.
SOT23-8L
ORDER CODES
PACKAGE
SOT23-8L
T&R
74V2T132STR
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
June 2003
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74V2T132 Datasheet
Recommendation 74V2T132 Datasheet
Part 74V2T132
Description DUAL 2-INPUT SHMITT TRIGGER NAND GATE
Feature 74V2T132; 74V2T132 DUAL 2-INPUT SHMITT TRIGGER NAND GATE HIGH SPEED: tPD = 3.7 ns (TYP.) at VCC = 5V LOW POWER.
Manufacture STMicroelectronics
Datasheet
Download 74V2T132 Datasheet




STMicroelectronics 74V2T132
74V2T132
INPUT EQUIVALENT CIRCUIT
www.DataSheet4U.com
PIN DESCRIPTION
PIN No
1, 5
2, 6
7, 3
4
8
SYMBOL
1A, 2A
1B, 2B
1Y, 2Y
GND
VCC
NAME QND FUNCTION
Data Input
Data Input
Data Output
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
A
L
L
H
H
B
L
H
L
H
Y
H
H
H
L
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC Supply Voltage
-0.5 to +7.0
V
VI DC Input Voltage
-0.5 to +7.0
V
VO DC Output Voltage (see note 1)
-0.5 to +7.0
V
VO DC Output Voltage (see note 2)
-0.5 to VCC + 0.5
V
IIK DC Input Diode Current
- 20 mA
IOK DC Output Diode Current
± 20
mA
IO DC Output Current
± 25
mA
ICC or IGND DC VCC or Ground Current
± 50
mA
Tstg Storage Temperature
-65 to +150
°C
TL Lead Temperature (10 sec)
300 °C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
1) VCC = 0V
2) High or Low State
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC Supply Voltage
VI Input Voltage
VO Output Voltage (see note 1)
VO Output Voltage (see note 2)
Top Operating Temperature
1) VCC = 0V
2) High or Low State
Value
4.5 to 5.5
0 to 5.5
0 to 5.5
0 to VCC
-55 to 125
Unit
V
V
V
V
°C
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STMicroelectronics 74V2T132
74V2T132
DC SPECIFICATIONS
Symbol
Parameter
Vt+
Vt-
www.DataSheet4U.com Vh
High Level
Threshold Voltage
Low Level
Threshold Voltage
Hysteresis Voltage
VOH
VOL
II
ICC
+ICC
IOPD
High Level Output
Voltage
Low Level Output
Voltage
Input Leakage
Current
Quiescent Supply
Current
Additional Worst
Case Supply
Current
Output Leakage
Current
Test Condition
Value
VCC
TA = 25°C
-40 to 85°C -55 to 125°C Unit
(V) Min. Typ. Max. Min. Max. Min. Max.
4.5 0.9 2.0 0.9 2.0 0.9 2.0
V
5.5 1.1 2.0 1.1 2.0 1.1 2.0
4.5 0.5 1.5 0.5 1.5 0.5 1.5
V
5.5 0.6 1.6 0.6 1.6 0.6 1.6
4.5 0.4 1.4 0.4 1.4 0.4 1.4
V
5.5 0.5 1.6 0.5 1.6 0.5 1.6
4.5 IO=-50 µA 4.4 4.5 4.4 4.4
4.5
IO=-8 mA
3.94
3.8 3.7
V
4.5 IO=50 µA
4.5 IO=8 mA
0.0 0.1
0.36
0.1
0.44
0.1
0.55
V
0 to
5.5
VI = 5.5V or GND
± 0.1
± 1.0
± 1.0 µA
5.5 VI = VCC or GND
1 10 20 µA
One Input at 3.4V,
5.5 other input at VCC
or GND
1.35 1.5
1.5 mA
0 VOUT = 5.5V
0.5 5.0 5.0 µA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns)
Test Condition
Value
Symbol
Parameter
VCC (*) CL
(V) (pF)
tPLH Propagation Delay 5.0 15
tPHL Time
5.0 50
(*) Voltage range is 5.0V ± 0.5V
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min.
Typ.
3.7
5.2
Max.
5.5
7.5
Min.
1.0
1.0
Max.
6.5
8.5
Min. Max.
1.0 6.5
1.0 8.5
ns
CAPACITANCE CHARACTERISTICS
Test Condition
Value
Symbol
Parameter
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
CIN Input Capacitance
4 10 10 10 pF
CPD Power Dissipation
Capacitance
(note 1)
19
pF
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/2
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