D5013UK FET Datasheet

D5013UK Datasheet, PDF, Equivalent


Part Number

D5013UK

Description

ROHS COMPLIANT METAL GATE RF SILICON FET

Manufacture

Seme LAB

Total Page 2 Pages
Datasheet
Download D5013UK Datasheet


D5013UK
TetraFET
D5013UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
C
www.DataSheet4U.com
A
2
1
3
F
(2 pls)
H
J
N
(typ)
B
D
(2 pls)
MI
PIN 1
PIN 3
SOURCE
GATE
E KG
DP
PIN 2 DRAIN
DIM mm
A 16.51
B 6.35
C 45°
D 3.30
E 18.92
F 1.52
G 2.16
H 14.22
I 1.52
J 6.35
K 0.13
M 5.08
N 1.27 x 45°
Tol. Inches Tol.
0.25 0.650 0.010
0.13 0.250 0.005
5° 45° 5°
0.13 0.130 0.005
0.08 0.745 0.003
0.13 0.060 0.005
0.13 0.085 0.005
0.08 0.560 0.003
0.13 0.060 0.005
0.13 0.250 0.005
0.03 0.005 0.001
0.51 0.200 0.020
0.13 0.050 x 45° 0.005
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 50V – 500MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• USEFUL PO AT 1GHz
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
50W
BVDSS
Drain – Source Breakdown Voltage
125V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
3A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3918
Issue 1

D5013UK
D5013UK
ELECTRICAL
www.DataSheet4U.com
CHARACTERISTICS
(Tcase
=
25°C
unless
otherwise
stated)
Parameter
Test Conditions
Min.
DrainSource
BVDSS Breakdown Voltage
VGS = 0
ID = 100mA
125
IDSS
Zero Gate Voltage
Drain Current
VDS = 50V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 20W
VDS = 50V
f = 500MHz
VDS = 0
VDS = VGS
ID = 0.5A
IDQ = 0.1A
1
0.8
13
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 50V
VDS = 50V
VDS = 50V
VGS = 5V f = 1MHz
VGS = 0 f = 1MHz
VGS = 0 f = 1MHz
Typ.
Max. Unit
V
1 mA
1 µA
7V
S
dB
%
60 pF
25 pF
1.5 pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHjcase
Thermal Resistance Junction Case
Max. 3.5°C / W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3918
Issue 1


Features TetraFET D5013UK ROHS COMPLIANT METAL G ATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 www.DataSheet4U .com A 1 F (2 pls) H J GOLD METALLIS ED MULTI-PURPOSE SILICON DMOS RF FET 20 W – 50V – 500MHz SINGLE ENDED FEATU RES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAN D APPLICATIONS • LOW Crss • USEFUL PO AT 1GHz DP PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN DIM mm A 16.51 B 6.35 C 45 ° D 3.30 E 18.92 F 1.52 G 2.16 H 14.22 I 1.52 J 6.35 K 0.13 M 5.08 N 1.27 x 4 5° Tol. 0.25 0.13 5° 0.13 0.08 0.13 0.13 0.08 0.13 0.13 0.03 0.51 0.13 Inc hes 0.650 0.250 45° 0.130 0.745 0.060 0.085 0.560 0.060 0.250 0.005 0.200 0.0 50 x 45° Tol. 0.010 0.005 5° 0.005 0 .003 0.005 0.005 0.003 0.005 0.005 0.00 1 0.020 0.005 • LOW NOISE • HIGH G AIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz t o 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcas e = 25°C unless otherwise stated) PD B VDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Sourc.
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