STGB18N40LZ

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features ■ AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive ■ Low saturation voltage ■ High pulsed current capability ■ Gate and gate-emitter resistor Application ■ Pencil coil electronic ignition driver Description This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system. IPAK 3 2 1 3 1 DPAK 123 I²PAK 3 2 1 TO-220 3 1 D²PAK Figure 1. Internal schematic diagram C (2 or TAB) G (1) RG RGE Table 1. Device summary Order codes Marking STGB18N40LZ-1 GB18N40LZ STGB18N40LZT4 GB18N40LZ STGD18N40LZ-1 GD18N40LZ STGD18N40LZT4 STGP18N40LZ GD18N40LZ GP18N40LZ Package I²PAK D²PAK IPAK DPAK TO-220 E (3) SC30180 Packaging Tube Tape and reel Tube Tape and reel Tube May 2009 Doc ID 14322 Rev 5 1/19 www.st.com 19 Contents Contents STGB18N40LZ, STGD18N40LZ, STGP18N40LZ 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . ....