PBRP123ET
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 01 — 16 January 2008 Product data sheet
1. Product p...
PBRP123ET
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 01 — 16 January 2008 Product data sheet
1. Product profile
1.1 General description
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800 mA
PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped
Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBRN123ET.
1.2 Features
I 800 mA repetitive peak output current I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance
1.3 Applications
I Digital application in automotive and industrial segments I Medium current peripheral driver I Switching loads
1.4 Quick reference data
Table 1. Symbol VCEO IO IORM R1 R2/R1
[1] [2] [3]
Quick reference data Parameter collector-emitter voltage output current repetitive peak output current tp ≤ 1 ms; δ ≤ 0.33 bias resistor 1 (input) bias resistor ratio Conditions open base
[1][2] [3]
Min 1.54 0.9
Typ 2.2 1
Max −40 −600 −800 2.86 1.1
Unit V mA mA kΩ
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
NXP Semiconductors
PBRP123ET
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ
2. Pinning information
Table 2. Pin...