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APT56F50B2 Dataheets PDF



Part Number APT56F50B2
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description N-Channel FREDFET
Datasheet APT56F50B2 DatasheetAPT56F50B2 Datasheet (PDF)

APT56F50B2 APT56F50L 500V, 56A, 0.10Ω Max, trr ≤280ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. .

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APT56F50B2 APT56F50L 500V, 56A, 0.10Ω Max, trr ≤280ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. T-Max® TO-264 APT56F50B2 APT56F50L Single die FREDFET FEATURES • Fast switching with low EMI • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • ZVS phase shifted and other full bridge • Half bridge • PFC and other boost converter • Buck converter • Single and two switch forward • Flyback Absolute Maximum Ratings Symbol Parameter ID Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C IDM Pulsed Drain Current 1 VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy 2 IAR Avalanche Current, Repetitive or Non-Repetitive Thermal and Mechanical Characteristics Symbol Characteristic PD RθJC Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw Ratings Unit 56 35 A 175 ±30 V 1200 mJ 28 A Min Typ Max Unit 780 W 0.16 °C/W 0.11 -55 150 °C 300 0.22 oz 6.2 g 10 in·lbf 1.1 N·m Microsemi Website - http://www.microsemi.com 050-8129 Rev D 9-2011 Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) ∆VBR(DSS)/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient VGS = 0V, ID = 250μA Reference to 25°C, ID = 250μA VGS = 10V, ID = 28A VGS = VDS, ID = 2.5mA 500 2.5 IDSS Zero Gate Voltage Drain Current VDS = 500V VGS = 0V TJ = 25°C TJ = 125°C IGSS Gate-Source Leakage Current VGS = ±30V APT56F50B2_L Typ Max Unit V 0.60 V/°C 0.085 0.10 Ω 4 5 V -10 mV/°C 250 μA 1000 ±100 nA Dynamic Characteristics Symbol gfs Ciss Crss Coss Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance TJ = 25°C unless otherwise specified Test Conditions Min VDS = 50V, ID = 28A VGS = 0V, VDS = 25V f = 1MHz Co(cr) 4 Co(er) 5 Effective Output Capacitance, Charge Related E.


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