Document
APT56F50B2 APT56F50L
500V, 56A, 0.10Ω Max, trr ≤280ns
N-Channel FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
T-Max®
TO-264
APT56F50B2 APT56F50L Single die FREDFET
FEATURES
• Fast switching with low EMI • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge • Half bridge • PFC and other boost converter • Buck converter • Single and two switch forward • Flyback
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C
IDM
Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD RθJC
Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance
RθCS Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG Operating and Storage Junction Temperature Range
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
WT
Package Weight
Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw
Ratings
Unit
56
35
A
175
±30
V
1200
mJ
28
A
Min Typ Max Unit
780
W
0.16 °C/W
0.11
-55
150
°C
300
0.22
oz
6.2
g
10 in·lbf
1.1 N·m
Microsemi Website - http://www.microsemi.com
050-8129 Rev D 9-2011
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min
VBR(DSS) ∆VBR(DSS)/∆TJ
RDS(on) VGS(th) ∆VGS(th)/∆TJ
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 250μA
VGS = 10V, ID = 28A
VGS = VDS, ID = 2.5mA
500 2.5
IDSS
Zero Gate Voltage Drain Current
VDS = 500V VGS = 0V
TJ = 25°C TJ = 125°C
IGSS
Gate-Source Leakage Current
VGS = ±30V
APT56F50B2_L
Typ Max Unit
V
0.60
V/°C
0.085 0.10
Ω
4
5
V
-10
mV/°C
250
μA
1000
±100 nA
Dynamic Characteristics
Symbol gfs Ciss Crss Coss
Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance
TJ = 25°C unless otherwise specified
Test Conditions
Min
VDS = 50V, ID = 28A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4 Co(er) 5
Effective Output Capacitance, Charge Related E.