N-Channel MOSFET. APT56M50L Datasheet

APT56M50L MOSFET. Datasheet pdf. Equivalent


Microsemi Corporation APT56M50L
APT56M50B2
APT56M50L
500V, 56A, 0.10Ω Max
N-Channel MOSFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
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T-MaxTM
TO-264
APT56M50B2
APT56M50L
D
Single die MOSFET
G
S
FEATURES
• Fast switching with low EMI/RFI
• Low RDS(on)
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
RθCS Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG Operating and Storage Junction Temperature Range
TL Soldering Temperature for 10 Seconds (1.6mm from case)
WT Package Weight
Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Microsemi Website - http://www.microsemi.com
Ratings
56
35
175
±30
1200
28
Unit
A
V
mJ
A
Min Typ Max Unit
780 W
0.16
°C/W
0.11
-55 150
°C
300
0.22 oz
6.2 g
12 in·lbf
1.4 N·m


APT56M50L Datasheet
Recommendation APT56M50L Datasheet
Part APT56M50L
Description N-Channel MOSFET
Feature APT56M50L; APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high volta.
Manufacture Microsemi Corporation
Datasheet
Download APT56M50L Datasheet




Microsemi Corporation APT56M50L
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
500
∆VBR(DSS)/∆TJ Breakdown Voltage Temperature Coefficient
RDS(on)
Drain-Source On Resistance 3
Reference to 25°C, ID = 250µA
VGS = 10V, ID = 28A
VGS(th)
∆VGS(th)/∆TJ
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
VGS = VDS, ID = 2.5mA
3
IDSS Zero Gate Voltage Drain Current
VDS = 500V
VGS = 0V
TJ = 25°C
TJ = 125°C
IGSS Gate-Source Leakage Current
VGS = ±30V
Dynamic Characteristics
Symbol
gfs
www.DataSheet4U.cCoCmrissss
Coss
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
TJ = 25°C unless otherwise specified
Test Conditions
Min
VDS = 50V, ID = 28A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4
Effective Output Capacitance, Charge Related
VGS = 0V, VDS = 0V to 333V
Co(er) 5
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Effective Output Capacitance, Energy Related
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Co(er) =
-2.04E-7 4.76E-8
+
VD2S
VDS
+ 1.36E-10
VGS = 0 to 10V, ID = 28A,
VDS = 250V
Resistive Switching
VDD = 333V, ID = 28A
RG = 4.7Ω 6 , VGG = 15V
APT56M50B2_L
Typ Max Unit
V
0.60 V/°C
0.085 0.10
45V
-10 mV/°C
100
500
µA
±100 nA
Typ
42
8800
120
945
550
Max
Unit
S
pF
275
220
50 nC
100
38
45
100
ns
33
Source-Drain Diode Characteristics
Symbol Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 1
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
dv/dt
Peak Recovery dv/dt
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
D
G
S
ISD = 28A, TJ = 25°C, VGS = 0V
ISD = 28A 3
diSD/dt = 100A/µs, TJ = 25°C
ISD ≤ 28A, di/dt ≤1000A/µs, VDD = 333V,
TJ = 125°C
Min
Typ Max Unit
100
A
200
1
660
13.2
V
ns
µC
8 V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 3.06mH, RG = 4.7Ω, IAS = 28A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of VDSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of VDSS. The equation in the test conditions
box can be used to calculate Co(er) for any value of VDS less than VDSS.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.



Microsemi Corporation APT56M50L
200
VGS = 10V
160
TJ = -55°C
120
TJ = 25°C
80
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40 TJ = 150°C
TJ = 125°C
00 5 10 15 20 25
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
2.5
NORMALIZED TO
VGS = 10V @ 28A
2.0
1.5
1.0
0.5
0-55 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
70
60 TJ = -55°C
50 TJ = 25°C
TJ = 125°C
40
30
20
10
00 10 20 30 40
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
ID = 28A
14
50
12
VDS = 100V
10
VDS = 250V
8
6 VDS = 400V
4
2
00 50 100 150 200 250 300 350
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
100
90 TJ = 125°C
80
VGS= 7,8 & 10V
APT56M50B2_L
70 6V
60
50
40
30
20 5V
10 4.5V
0 0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
175
150
VDS> ID(ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
125
100 TJ = -55°C
TJ = 25°C
75
TJ = 125°C
50
25
00
20,000
10,000
2 4 6 8 10
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
Ciss
1000
100
Coss
Crss
10 0
100 200
300 400
500
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
175
150
125
100
TJ = 25°C
75
TJ = 150°C
50
25
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage







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