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APT56M60L Dataheets PDF



Part Number APT56M60L
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description N-Channel MOSFET
Datasheet APT56M60L DatasheetAPT56M60L Datasheet (PDF)

APT56M60B2 APT56M60L 600V, 60A, 0.11Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even.

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APT56M60B2 APT56M60L 600V, 60A, 0.11Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. T-Ma x TM TO-264 APT56M60B2 APT56M60L D Single die MOSFET G S FEATURES • Fast switching with low EMI/RFI • Low RDS(on) • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • PFC and other boost converter • Buck converter • Two switch forward (asymmetrical bridge) • Single switch forward • Flyback • Inverters Absolute Maximum Ratings Symbol Parameter ID Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C IDM Pulsed Drain Current 1 VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy 2 IAR Avalanche Current, Repetitive or Non-Repetitive Thermal and Mechanical Characteristics Symbol Characteristic PD RθJC Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw Ratings Unit 60 38 A 210 ±30 V 1580 mJ 28 A Min Typ Max Unit 1040 W 0.12 °C/W 0.11 -55 150 °C 300 0.22 oz 6.2 g 10 in·lbf 1.1 N·m Microsemi Website - http://www.microsemi.com 050-8086 Rev F 8-2011 Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) ∆VBR(DSS)/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient VGS = 0V, ID = 250μA Reference to 25°C, ID = 250μA VGS = 10V, ID = 28A VGS = VDS, ID = 2.5mA 600 3 IDSS Zero Gate Voltage Drain Current VDS = 600V VGS = 0V TJ = 25°C TJ = 125°C IGSS Gate-Source Leakage Current VGS = ±30V APT56M60B2_L Typ Max Unit V 0.57 V/°C 0.09 0.11 Ω 4 5 V -10 mV/°C 100 μA 500 ±100 nA Dynamic Characteristics Symbol gfs Ciss Crss Coss Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance TJ = 25°C unless otherwise specified Test Conditions Min VDS = 50V, ID = 28A VGS = 0V, VDS = 25V f = 1MHz Co(cr) 4 Co(er) 5 Effective Output Capacitance, Charge Related Effective Output Capacitance, Energy Related VGS = 0V, VDS = 0V to 400V Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time VGS = 0 to 10V, ID = 28A, VDS = 300V Resistive Switching VDD = 400V, ID = 28A RG = 2.2Ω 6 , VGG = 15V Typ 55 11300 115 1040 550 285 280 60 120 65 75 190 60 Max Unit S pF nC ns Source-Drain Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) 1 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge dv/dt Peak Recovery dv/dt Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) D G S ISD = 28A, TJ = 25°C, VGS = 0V ISD = 28A 3 diSD/dt = 100A/μs, TJ = 25°C ISD ≤ 28A, di/dt ≤1000A/μs, VDD = 100V, TJ = 125°C Min Typ Max Unit 60 A 210 1.0 V 745 ns 19 μC 8 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 4.03mH, RG = 25Ω, IAS = 28A. 3 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -1.10E-7/VDS^2 + 4.60E-8/VDS + 1.72E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 050-8086 Rev F 8-2011 VGS, GATE-TO-SOURCE VOLTAGE (V) gfs, TRANSCONDUCTANCE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (A) 250 VGS = 10V 200 150 100 TJ = -55°C TJ = 25°C 50 TJ = 150°C TJ = 125°C 0 0 5 10 15 20 25 30 VDS(ON), DRAI.


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