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APT56M60L Dataheets PDF



Part Number APT56M60L
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description N-Channel MOSFET
Datasheet APT56M60L DatasheetAPT56M60L Datasheet (PDF)

APT56M60B2 APT56M60L 600V, 60A, 0.11Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even.

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APT56M60B2 APT56M60L 600V, 60A, 0.11Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. T-Ma x TM TO-264 APT56M60B2 APT56M60L D Single die MOSFET G S FEATURES • Fast switching with low EMI/RFI • Low RDS(on) • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • PFC and other boost converter • Buck converter • Two switch forward (asymmetrical bridge) • Single switch forward • Flyback • Inverters Absolute Maximum Ratings Symbol Parameter ID Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C IDM Pulsed Drain Current 1 VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy 2 IAR Avalanche Current, Repetitive or Non-Repetitive Thermal and Mechanical Characteristics Symbol Characteristic PD RθJC Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw Ratings Unit 60 38 A 210 ±30 V 1580 mJ 28 A Min Typ Max Unit 1040 W 0.12 °C/W 0.11 -55 150 °C 300 0.22 oz 6.2 g 10 in·lbf 1.1 N·m Microsemi Website - http://www.microsemi.com 050-8086 Rev F 8-2011 Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) ∆VBR(DSS)/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient VGS = 0V, ID = 250μA Reference to 25°C, ID = 250μA VGS = 10V, ID = 28A VGS = VDS, ID = 2.5mA 600 3 IDSS Zero Gate Voltage Drain Current VDS = 600V VGS = 0V TJ = 25°C TJ = 125°C IGSS Gate-Source Leakage Current VGS = ±30V APT56M60B2_L Typ Max Unit V 0.57 V/°C 0.09 0.11 Ω 4 5 V -10 mV/°C 100 μA 500 ±100 nA Dynamic Characteristics Symbol gfs Ciss Crss Coss Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance TJ = 25°C unless otherwise specified Test Conditions Min VDS = 50V, ID = 28A VGS = 0V, VDS = 25V f = 1MHz Co(cr) 4 Co(er) 5 Effective Output Capacitance, Charge Related Effective Output Capacitance, Energy Related VGS = 0V, VDS = 0V to 400V Qg.


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