Document
APT56M60B2 APT56M60L
600V, 60A, 0.11Ω Max
N-Channel MOSFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
T-Ma x TM
TO-264
APT56M60B2
APT56M60L D
Single die MOSFET G S
FEATURES
• Fast switching with low EMI/RFI • Low RDS(on) • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant
TYPICAL APPLICATIONS
• PFC and other boost converter • Buck converter • Two switch forward (asymmetrical bridge) • Single switch forward • Flyback • Inverters
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C
IDM
Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD RθJC
Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance
RθCS Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG Operating and Storage Junction Temperature Range
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
WT
Package Weight
Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw
Ratings
Unit
60
38
A
210
±30
V
1580
mJ
28
A
Min Typ Max Unit
1040 W
0.12 °C/W
0.11
-55
150
°C
300
0.22
oz
6.2
g
10 in·lbf
1.1 N·m
Microsemi Website - http://www.microsemi.com
050-8086 Rev F 8-2011
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min
VBR(DSS) ∆VBR(DSS)/∆TJ
RDS(on) VGS(th) ∆VGS(th)/∆TJ
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 250μA
VGS = 10V, ID = 28A
VGS = VDS, ID = 2.5mA
600 3
IDSS
Zero Gate Voltage Drain Current
VDS = 600V VGS = 0V
TJ = 25°C TJ = 125°C
IGSS
Gate-Source Leakage Current
VGS = ±30V
APT56M60B2_L
Typ Max Unit
V
0.57
V/°C
0.09 0.11
Ω
4
5
V
-10
mV/°C
100
μA
500
±100 nA
Dynamic Characteristics
Symbol gfs Ciss Crss Coss
Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance
TJ = 25°C unless otherwise specified
Test Conditions
Min
VDS = 50V, ID = 28A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4 Co(er) 5
Effective Output Capacitance, Charge Related Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 400V
Qg Qgs Qgd td(on)
tr td(off)
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 28A,
VDS = 300V
Resistive Switching
VDD = 400V, ID = 28A RG = 2.2Ω 6 , VGG = 15V
Typ 55 11300 115 1040
550
285
280 60 120 65 75 190 60
Max
Unit S pF
nC ns
Source-Drain Diode Characteristics
Symbol Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode) 1
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
dv/dt
Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
D G
S
ISD = 28A, TJ = 25°C, VGS = 0V
ISD = 28A 3
diSD/dt = 100A/μs, TJ = 25°C
ISD ≤ 28A, di/dt ≤1000A/μs, VDD = 100V, TJ = 125°C
Min
Typ Max Unit
60 A
210
1.0
V
745
ns
19
μC
8
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 4.03mH, RG = 25Ω, IAS = 28A. 3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -1.10E-7/VDS^2 + 4.60E-8/VDS + 1.72E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
050-8086 Rev F 8-2011
VGS, GATE-TO-SOURCE VOLTAGE (V)
gfs, TRANSCONDUCTANCE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (A)
250
VGS = 10V
200
150
100
TJ = -55°C TJ = 25°C
50
TJ = 150°C
TJ = 125°C
0
0
5
10 15 20 25 30
VDS(ON), DRAI.