Document
STB25NM60ND-STI25NM60ND STF/P25NM60ND-STW25NM60ND
N-channel 600 V - 0.13 Ω - 21 A FDmesh™ II Power MOSFET D2PAK - I2PAK - TO-220FP - TO-220 - TO-247
Features
Type
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VDSS @ TJMAX
RDS(on) max
ID
3
3
1 2
3 1 2
1
STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND
650 V
0.16 Ω
21 A 21 A 21 A(1) 21 A 21 A
TO-220
D2PAK
TO-220FP
1. Limited only by maximum temperature allowed ■ ■ ■ ■ ■
3 12
2 1
3
The worldwide best RDS(on)*area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1.
I2PAK
TO-247
Internal schematic diagram
Application
■
Switching applications
Description
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in ZVS phase-shift converters. Table 1. Device summary
Marking 25NM60ND 25NM60ND 25NM60ND 25NM60ND 25NM60ND Rev 3 Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube 1/18
www.st.com 18
Order codes STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND April 2008
Contents
STP/F25NM60ND - STB25NM60ND - STI25NM60ND - STW25NM60ND
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
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3 4 5 6
Test circuits
.............................................. 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
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STP/F25NM60ND - STB25NM60ND - STI25NM60ND - STW25NM60ND
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value Parameter TO-220/D2PAK I2PAK / TO-247 600 ±25 21 13 84 160 40 -–55 to 150 150 2500 21
(1)
Unit TO-220FP V V A A A W V/ns V °C °C
VDS
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Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Storage temperature Max. operating junction temperature
VGS ID ID IDM
(2)
13(1) 84(1) 40
PTOT dv/dt(3) Viso Tstg TJ
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 21 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS
Table 3.
Symbol Rthj-case Rthj-amb Rthj-pcb
Thermal data
Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose -62.5 -TO-220 I²PAK 0.78 50 --30 TO-247 D²PAK TO-220FP 3.1 62.5 -Unit °C/W °C/W °C/W
Tl
300
°C
Table 4.
Symbol IAS EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V) Max value 10 850 Unit A mJ
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Electrical characteristics
STP/F25NM60ND - STB25NM60ND - STI25NM60ND - STW25NM60ND
2
Electrical characteristics
(TCASE=25 °C unless otherwise specified) Table 5.
Symbol
On/off states
Value Parameter Drain-source breakdown voltage Drain source voltage slope Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions Min. Typ. Max. V 48 1 100 100 3 4 0.13 5 0.16 V/ns µA µA nA V Ω Unit
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V(BR)DSS dv/dt(1) IDSS IGSS VGS(th) RDS(on)
ID = 1 mA, VGS = 0 VDD= 480 V, ID= 21 A, VGS= 10 V VDS = Max rating VDS = Max rating @125 °C VGS = ± 20 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 10.5 A
600
1. Characteristic value at turn off on inductive load
Table 6.
Symbol gfs
(1)
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions VDS = 15 V, ID = 10.5 A VDS = 50 V, f = 1 MHz, VGS = 0 Min. Typ. 17 2400 150 15 320 60 30 50 40 80 40 15 1.6 Max. Unit S pF pF pF
Ciss Coss Crss Coss eq.(2) td(on) tr td(off) tf Qg Qgs Qgd Rg
VGS = 0, VDS = 0 to 480 V VDD = 300 V, ID = 10.5 A RG = 4.7 Ω VGS = 10 V (see Figure 2.