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STI25NM60ND Dataheets PDF



Part Number STI25NM60ND
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel MOSFET
Datasheet STI25NM60ND DatasheetSTI25NM60ND Datasheet (PDF)

STB25NM60ND-STI25NM60ND STF/P25NM60ND-STW25NM60ND N-channel 600 V - 0.13 Ω - 21 A FDmesh™ II Power MOSFET D2PAK - I2PAK - TO-220FP - TO-220 - TO-247 Features Type www.DataSheet4U.com VDSS @ TJMAX RDS(on) max ID 3 3 1 2 3 1 2 1 STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND 650 V 0.16 Ω 21 A 21 A 21 A(1) 21 A 21 A TO-220 D2PAK TO-220FP 1. Limited only by maximum temperature allowed ■ ■ ■ ■ ■ 3 12 2 1 3 The worldwide best RDS(on)*area amongst the fast recovery diode .

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STB25NM60ND-STI25NM60ND STF/P25NM60ND-STW25NM60ND N-channel 600 V - 0.13 Ω - 21 A FDmesh™ II Power MOSFET D2PAK - I2PAK - TO-220FP - TO-220 - TO-247 Features Type www.DataSheet4U.com VDSS @ TJMAX RDS(on) max ID 3 3 1 2 3 1 2 1 STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND 650 V 0.16 Ω 21 A 21 A 21 A(1) 21 A 21 A TO-220 D2PAK TO-220FP 1. Limited only by maximum temperature allowed ■ ■ ■ ■ ■ 3 12 2 1 3 The worldwide best RDS(on)*area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1. I2PAK TO-247 Internal schematic diagram Application ■ Switching applications Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in ZVS phase-shift converters. Table 1. Device summary Marking 25NM60ND 25NM60ND 25NM60ND 25NM60ND 25NM60ND Rev 3 Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube 1/18 www.st.com 18 Order codes STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND April 2008 Contents STP/F25NM60ND - STB25NM60ND - STI25NM60ND - STW25NM60ND Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 www.DataSheet4U.com 3 4 5 6 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 STP/F25NM60ND - STB25NM60ND - STI25NM60ND - STW25NM60ND Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Value Parameter TO-220/D2PAK I2PAK / TO-247 600 ±25 21 13 84 160 40 -–55 to 150 150 2500 21 (1) Unit TO-220FP V V A A A W V/ns V °C °C VDS www.DataSheet4U.com Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Storage temperature Max. operating junction temperature VGS ID ID IDM (2) 13(1) 84(1) 40 PTOT dv/dt(3) Viso Tstg TJ 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 21 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-amb Rthj-pcb Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose -62.5 -TO-220 I²PAK 0.78 50 --30 TO-247 D²PAK TO-220FP 3.1 62.5 -Unit °C/W °C/W °C/W Tl 300 °C Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V) Max value 10 850 Unit A mJ 3/18 Electrical characteristics STP/F25NM60ND - STB25NM60ND - STI25NM60ND - STW25NM60ND 2 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 5. Symbol On/off states Value Parameter Drain-source breakdown voltage Drain source voltage slope Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions Min. Typ. Max. V 48 1 100 100 3 4 0.13 5 0.16 V/ns µA µA nA V Ω Unit www.DataSheet4U.com V(BR)DSS dv/dt(1) IDSS IGSS VGS(th) RDS(on) ID = 1 mA, VGS = 0 VDD= 480 V, ID= 21 A, VGS= 10 V VDS = Max rating VDS = Max rating @125 °C VGS = ± 20 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 10.5 A 600 1. Characteristic value at turn off on inductive load Table 6. Symbol gfs (1) Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions VDS = 15 V, ID = 10.5 A VDS = 50 V, f = 1 MHz, VGS = 0 Min. Typ. 17 2400 150 15 320 60 30 50 40 80 40 15 1.6 Max. Unit S pF pF pF Ciss Coss Crss Coss eq.(2) td(on) tr td(off) tf Qg Qgs Qgd Rg VGS = 0, VDS = 0 to 480 V VDD = 300 V, ID = 10.5 A RG = 4.7 Ω VGS = 10 V (see Figure 2.


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