STW20NK70Z

STW20NK70Z N-CHANNEL 700V - 0.25Ω - 20A TO-247 Zener-Protected SuperMESH™Power MOSFET TARGET DATA TYPE STW20NK70Z www.DataSheet4U.com n TYPICAL n n n n n VDSS 700 V RDS(on) < 0.285 Ω ID 20 A Pw 300 W RDS(on) = 0.25 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 2 1 TO-247 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING n IDEAL FOR OFF-LINE POWER SUPPLIES n ORDERING INFORMATION SALES TYPE STW20NK70Z MARKING W20NK70Z PACKAGE TO-247 PACKAGING TUBE June 2003 1/6 STW20NK70Z ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT www.DataSheet4U.com Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Value 700 700 ± 30 20 12 80 300 2.4...