4 DRAM. M11B1644A Datasheet

M11B1644A DRAM. Datasheet pdf. Equivalent

M11B1644A Datasheet
Recommendation M11B1644A Datasheet
Part M11B1644A
Description (M11x1644xA) 4M X 4 DRAM
Feature M11B1644A; $% DRAM FEATURES X4 organization EDO (Extended Data-Out) access mode Single power supply : 5V ± 10.
Manufacture EliteMT
Datasheet
Download M11B1644A Datasheet




EliteMT M11B1644A
$%
DRAM
M11B1644A / M11B1644SA
M11L1644A / M11L1644SA
4M x 4 DRAM
EDO PAGE MODE
FEATURES
ORDERING INFORMATION - PACKAGE
y X4 organization
y EDO (Extended Data-Out) access mode
y Single power supply :
5V ± 10% Vcc for 5V product
3.3V ± 10% Vcc for 3.3V product
www.DataShyeetI4nUte.crofamce for inputs and outputs
TTL-compatible for 5V products
LVTTL-compatible for 3.3V products
y 2048-cycle refresh in 32ms
y Refresh modes : RAS only, CAS BEFORE RAS (CBR)
and HIDDEN capabilities,
y Optional self-Refresh capabilities(S-ver. Only)
y JEDEC standard pinout
y Key AC Parameter
tRAC
tCAC
tRC
tPC
-45 45 11 77 16
-50 50 13 84 20
-60 60
15 104 25
GENERAL DESCRIPTION
24 / 26-pin 300mil SOJ
24 / 26-pin 300mil TSOP (TypeII)
PRODUCT NO.
Refresh
Vcc
PACKING
TYPE
M11B1644A-45J/50J/60J
M11B1644SA-45J/50J/60J
Normal
*Self- 5V
Refresh
M11L1644A-45J/50J/60J
M11L1644SA-45J/50J/60J
Normal
Self- 3.3V
Refresh
M11B1644A-45T/50T/60T Normal
M11B1644SA-45T/50T/60T
*Self-
Refresh
5V
M11L1644A-45T/50T/60T
M11L1644SA-45T/50T/60T
Normal
Self- 3.3V
Refresh
* Ordered by special request
SOJ
TSOPII
The M11B1644/M11L1644 series is a randomly accessed solid state memory, organized as 4,194,304 x 4 bits device. It
offers Extended Data-Output access mode. Single power supply (5V ± 10%, 3.3V ± 10%), access time (-45,-50,-60), self-
refresh function and package type (SOJ, TSOP II) are optional features of this family. All these family have CAS - before -
RAS , RAS -only refresh and Hidden refresh.
The primary advantage of EDO is the availability of data-out even after CAS returns high. EDO allows CAS precharge
time (tPC) to occur without the output data going invalid. This elimination of CAS output control allows pipeline Read.
PIN ASSIGNMENT
SOJ Top View
VCC
I/O0
I/O1
WE
RAS
NC
1
2
3
4
5
6
2 4 VSS
2 3 I/O3
22 I/O2
2 1 CAS
2 0 OE
1 9 A9
A10 7
A0 8
A1 9
A2 1 0
A3 1 1
VCC 1 2
1 8 A8
1 7 A7
1 6 A6
1 5 A5
1 4 A4
1 3 VSS
TSOP (TypeII) Top View
VCC
I/O 0
I/O 1
WE
RAS
NC
1
2
3
4
5
6
2 4 VSS
2 3 I/O3
22 I/O2
2 1 CAS
2 0 OE
1 9 A9
A10 7
A0 8
A1 9
A2 1 0
A3 1 1
VCC 1 2
1 8 A8
1 7 A7
1 6 A6
1 5 A5
1 4 A4
1 3 VSS
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2001
Revision : 1.1
1/16



EliteMT M11B1644A
$%
FUNCTIONAL BLOCK DIAGRAM
M11B1644A / M11B1644SA
M11L1644A / M11L1644SA
WE
RAS
CAS
www.DataSheet4U.com
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
CONTROL
LOGIC
CLOCK
GENERATOR
COLUMN
11 ADDRESS
BUFFER
REFRESH
CONTROLER
REFRESH
COUNTER
11
ROW.
11 ADDRESS
BUFFERS(11)
DATA-IN BUFFER
IO0
4:
IO3
COLUMN
11 DECODER
2048
4
SENSE AMPLIFIERS
I/O GATING 8
2048 x 4
DATA-OUT
BUFFER
4
2048 x 2048 x 4
2048
MEMORY
11 ARRAY
OE
VBB GENERATOR
VCC
VSS
PIN DESCRIPTIONS
PIN NO.
8~11,14~19,7
5
21
4
20
2,3,22,23
1,12
13,24
6
PIN NAME
A0~A10
RAS
CAS
WE
OE
I/O0 ~ I/O3
VCC
VSS
NC
TYPE
Input
Input
Input
Input
Input
Input / Output
Supply
Ground
-
DESCRIPTION
Address Input
Row Address : A0~A10
Column Address : A0~A10
Row Address Strobe
Column Address Strobe
Write Enable
Output Enable
Data Input / Output
Power, (5V or 3.3V)
Ground
No Connect
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2001
Revision : 1.1
2/16



EliteMT M11B1644A
$%
M11B1644A / M11B1644SA
M11L1644A / M11L1644SA
ABSOLUTE MAXIMUM RATINGS
Voltage on Any pin Relative to Vss
5V Product
… ……-1V to +7V
3.3V Product
… ……-0.5V to +4.6V
Operating Temperature, TA (ambient) ….0 °C to +70 °C
Storage Temperature (plastic) ……….-55 °C to +150 °C
Power Dissipation …………………………………1.0W
Short Circuit Output Current ……………………50mA
Permanent device damage may occur if “Absolute
Maximum Ratings” are exceeded. This is a stress rating
only, and functional operation of the device above those
conditions indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
www.DataSheet4U.com
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED
OPERATING CONDITIONS (0 °C TA 70 °C )
PARAMETER
CONDITIONS
3.3V
SYMBOL
MIN MAX
5V
UNITS NOTES
MIN MAX
Supply Voltage
VCC 3.0 3.6 4.5 5.5 V 1
Supply Voltage
VSS 0 0 0 0 V
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
0V VIN VIH(max)
0V VOUT VCC
Output(s) disable
5V IOH = -5 mA
3.3V IOH = -2 mA
5V IOL = 4.2 mA
3.3V IOL = 2 mA
VIH
VIL
ILI
ILO
VOH
VOL
2.0 VCC +0.3 2.4 VCC +0.3 V
-0.3 0.8 -0.3 0.8
V
-10 10 -10 10 µ A
-10 10 -10 10 µ A
2.4 - 2.4 - V
- 0.4 - 0.4 V
1
1
Note : 1.All Voltages referenced to VSS
PARAMETER
CONDITIONS
MAX
SYMBOL
UNITS NOTES
-45 -50 -60
Operating Current
RAS , CAS cycling , tRC =min
ICC1 150 140 130 mA 1,2
Standby Current
RAS only refresh Current
EDO Page Mode Current
TTL interface , RAS , CAS = VIH ,
DOUT =High-Z
4 4 4 mA
ICC2
CMOS interface, RAS , CAS VCC-0.2V
2 2 2 mA
tRC = min
ICC3 150 140 130 mA
2
tPC = min
ICC4 150 140 130 mA 1,3
CAS Before RAS Refresh
Current
Battery Backup Current
(S-ver. Only)
Self Refresh Current
tRC = min
Standby with CBR refresh, tRC =31.2us
tRAS 300ns, DOUT =Hi-Z, CMOS interface
RAS , CAS 0.2V, DOUT =Hi-Z, CMOS
interface
ICC6
ICC7
ICC8
150 140 130 mA
2 2 2 mA
2 2 2 mA
Note : 1. ICC max is specified at the output open condition.
2. Address can be changed twice or less while RAS =VIL .
3. Address can be changed once or less while CAS =VIH .
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2001
Revision : 1.1
3/16







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