2SC4115 Transistor Datasheet

2SC4115 Datasheet, PDF, Equivalent


Part Number

2SC4115

Description

Transistor

Manufacture

Jiangsu

Total Page 2 Pages
Datasheet
Download 2SC4115 Datasheet


2SC4115
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Plastic-Encapsulate Transistors
2SC4115 TRANSISTOR (NPN)
FEATURES
z Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)
www.DataShzeet4UE.cxocmellent current gain characteristics.
z Complements to 2SA1585
SOT-89
1. BASE
1
2. COLLECTOR
2
3
MAXIMUM RATINGS (TA=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
20
6
3
500
150
-55-150
Units
V
V
V
A
mW
3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage*
Transition frequency
*pulse test
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCEsat
fT
Test conditions
IC= 50μA, IE=0
IC=1mA , IB=0
IE=50μA, IC=0
VCB=30V, IE=0
VEB= 5V, IC=0
VCE=2V, IC= 0.1A
IC= 2A, IB=0.1A
VCE=2V, IC=0.5 A
F=100MHz
MIN TYP
MAX UNIT
40 V
20 V
6V
0.1 μA
0.1 μA
120 560
0.5 V
200 290
MHz
CLASSIFICATION OF hFE
Rank
Range
marking
Q
120-270
4115Q
R
180-390
4115R
S
270-560
4115S

2SC4115
Typical characteristics
www.DataSheet4U.com
2SC4115


Features JIANGSU CHANGJIANG ELECTRONICS TECHNOLOG Y CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR (NPN) SOT-89 1. BASE FEATURES z Low VCE(sat ).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) www.DataSheet4U.com z Excellent current gain characteristics. z Complem ents to 2SA1585 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Colle ctor-Base Voltage Collector-Emitter Vol tage Emitter-Base Voltage Collector Cur rent -Continuous Collector Power Dissip ation Junction Temperature Storage Temp erature Value 40 20 6 3 500 150 -55-150 Units V V V A mW ℃ ℃ 1 2 3 2. CO LLECTOR 3. EMITTER ELECTRICAL CHARACT ERISTICS (Tamb=25℃ unless otherwise s pecified) Parameter Collector-base brea kdown voltage Collector-emitter breakdo wn voltage Emitter-base breakdown volta ge Collector cut-off current Emitter cu t-off current DC current gain Collector -emitter saturation voltage* Transition frequency *pulse test Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE .
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