2SC4115 Transistor Datasheet

2SC4115 Datasheet, PDF, Equivalent


Part Number

2SC4115

Description

Transistor

Manufacture

Kexin

Total Page 1 Pages
Datasheet
Download 2SC4115 Datasheet


2SC4115
SMD Type
Low Frequency Transistor
2SC4115
Transistors
Features
Low VCE(sat):VCE(sat) = 0.2V (Typ.)
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IC / IB = 2A / 0.1A
NPN silicon transistor
Absolute Maximum Ratings Ta = 25
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
CollectorPower Dissipation
Junotion Temperature
storage Temperature
*1 Single pulse pw=10ms
Symbol
VCBO
VCEO
VEBO
IC
ICP *1
PC
TJ
Tstg
Rating
40
20
6
3
5
0.3
150
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter outoff current
Collector emitter saturation voltage
DC current gain
Output capacitance
Transition frequency
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
hFE
Cob
fT
Testconditons
IC=50ìA
IC=1mA
IE=50ìA
VCB=30V
VEB=5V
IC/IB=2A/0.1A
VCE=2V,IC=0.1A
VCB=10V,IE=0A,f=1MHz
VCE=2V.IE=0.5A,f=100MHz
hFE Classification
Rank
hFE
Q
120 270
R
180 390
S
270 560
Unit
V
V
V
A
A
W
Min Typ Max Unit
40 V
20 V
6V
0.1 A
0.1 A
0.2 0.5 V
120 560
25 pF
290 MHz
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Features SMD Type Low Frequency Transistor 2SC411 5 Transistors Features Low VCE(sat):V CE(sat) = 0.2V (Typ.) www.DataSheet4U.c om IC / IB = 2A / 0.1A NPN silicon tran sistor Absolute Maximum Ratings Ta = 2 5 Parameter collector-base voltage coll ector-emitter voltage emitter-base volt age collector current CollectorPower Di ssipation Junotion Temperature storage Temperature *1 Single pulse pw=10ms Sym bol VCBO VCEO VEBO IC ICP *1 PC TJ Tstg Rating 40 20 6 3 5 0.3 150 -55 to 150 Unit V V V A A W Electrical Characteri stics Ta = 25 Parameter Collector-base breakdown voltage collector-emitter bre akdown voltage Emitter-base breakdown v oltage Collector cutoff current Emitter outoff current Collector emitter satur ation voltage DC current gain Output ca pacitance Transition frequency Symbol V CBO VCEO VEBO ICBO IEBO VCE(sat) hFE Co b fT IC=50ìA IC=1mA IE=50ìA VCB=30V V EB=5V IC/IB=2A/0.1A VCE=2V,IC=0.1A VCB= 10V,IE=0A,f=1MHz VCE=2V.IE=0.5A,f=100MH z 120 25 290 0.2 Testconditons Min 40 20 6 0.1 0.1 0.5 560 pF MHz.
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