RMDA1840

RMDA1840 18-40 GHz Broad Band Driver Amplifier MMIC PRODUCT INFORMATION Description The RMDA1840 is a 4-stage GaAs MMIC amplifier designed as a 18 to 40 GHz broad band amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. The RMDA1840 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of applications, such as a driver amplifier or a frequency multiplier. 4 mil substrate Small-signal gain 22 dB (typ.) Pout 1 dB comp 23 dBm (typ.) Chip size 4.67 mm x 2.00 mm Features www.DataSheet4U.com Absolute Maximum Ratings Parameter Positive DC voltage (+5 V Typical) Negative DC voltage Simultaneous (Vd - Vg) Positive DC Current RF Input Power (from 50 Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Symbol Vd Vg Vdg ID PIN TC Tstg RJC Value +6 -2 +8 442 +15 -30 to +85 -55 to +125 53 Units Volts Volts Volts mA dBm °C °C °C/W Electrical Characteristics (At 25°C), 50 Ω system, Vd = +5 V, Quiescent Current Idq = 400 mA Parameter Frequency Range Gate Supply Voltage (Vg)1 Gain Small Signal at Pin = -5 dBm Gain Variation vs Frequency Gain at 1dB Compression Power Output at 1 dB Compression Min 18 Typ -0.2 Max Unit 40 GHz V dB dB dB dBm Parameter Power Output Saturated: Pin = +3 dBm Power Added Efficiency (PAE): at P1dB Input Return Loss (Pin = -5 dBm) Output Return Loss (Pin = -5 dBm) Min 21 Typ 24 15 8...