HMC608

HMC608 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz 3 LINEAR & POIWER AMPLIFIERS - CHIP Typical Applications The HMC608 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios Military End-Use Features Output IP3: +33 dBm Saturated Power: +27.5 dBm @ 23% PAE Gain: 32 dB Supply: +5V @ 310 mA 50 Ohm Matched Input/Output 2.1 x 1.2 x 0.1 mm Die Size www.DataSheet4U.com Functional Diagram General Description The HMC608 is a high dynamic range GaAs PHEMT MMIC Medium Power Amplifier chip. The amplifier has two modes of operation: high gain mode (Vpd pin shorted to ground); and low gain mode (Vpd pin left open). The electrical specifications in the table below are shown for the amplifier operating in high gain mode. Operating from 9.5 to 11.5 GHz, the amplifier provides 32 dB of gain, +27.5 dBm of saturated power and 23% PAE from a +5.0 V supply voltage. Noise figure is 5.5 dB while output IP3 is +33 dBm. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use. Electrical Specifications, TA = +25° C, Vdd1, 2, 3 = 5V, Idd = 310 mA [1] , Vpd = GND[2] Parameter Frequency Range Gain [3] Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd = Idd1 +Idd2 +Idd3)(Vdd = +5V, Vgg = -2.6V Typ.) [3] [1] Adjust Vgg between -3 to 0V to achieve Idd = 310 mA typical. [2] Vpd= ground for high gain mode, ...