2SA812 Transistor Datasheet

2SA812 Datasheet, PDF, Equivalent


Part Number

2SA812

Description

Silicon Epitaxial Planar Transistor

Manufacture

BL

Total Page 4 Pages
Datasheet
Download 2SA812 Datasheet


2SA812
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z Commplementary to 2SC1623.
z High DC current gain:hFE=200typ.
(VCE=-6.0V,IC=-1.0mA)
z High Voltage: VCEO=-50V
www.DataSheet4U.com
Pb
Lead-free
APPLICATIONS
z Audio frequency, general purpose amplifier
ORDERING INFORMATION
Type No.
Marking
2SA812
M4/M5/M6/M7
2SA812
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-50
VEBO
Emitter-Base Voltage
-5
IC Collector Current -Continuous
-100
PC Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mW
Document number: BL/SSSTC010
Rev.A
www.galaxycn.com
1

2SA812
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SA812
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0
-60
V
www.DataSheCeto4Ulle.ccotmor-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=B 0
-50
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA,IC=0
-5
V
Collector cut-off current
ICBO VCB=-60V,IE=0
-0.1 μA
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
Base-emitter voltage
Transition frequency
VBE
fT
Collector output capacitance
Cob
VEB=-5V,IC=0
-0.1 μA
VCE=-6V,IC=-1mA
90 200 600
IC=-100mA, IB=B -10mA
-0.3 V
IC=-1mA, VCE=-6V
VCE=-6V, IC=-10mA
-0.58
-0.68 V
180 MHz
VCB=-10V,IE=0,f=1MHz
4.5
pF
CLASSIFICATION OF hFE(1)
Range
M4
Marking
90-180
M5
135-270
M6
200-400
M7
300-600
Document number: BL/SSSTC010
Rev.A
www.galaxycn.com
2


Features BL Galaxy Electrical Silicon Epitaxial P lanar Transistor FEATURES z z Commpleme ntary to 2SC1623. High DC current gain: hFE=200typ. (VCE=-6.0V,IC=-1.0mA) z Hig h Voltage: VCEO=-50V Production specif ication 2SA812 Pb Lead-free www.Data Sheet4U.com APPLICATIONS z Audio frequ ency, general purpose amplifier SOT-23 ORDERING INFORMATION Type No. 2SA812 M arking M4/M5/M6/M7 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless other wise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Vo ltage Collector-Emitter Voltage Emitter -Base Voltage Collector Current -Contin uous Collector Dissipation Junction and Storage Temperature Value -60 -50 -5 - 100 200 -55~150 Units V V V mA mW ℃ Document number: BL/SSSTC010 Rev.A www .galaxycn.com 1 BL Galaxy Electrical S ilicon Epitaxial Planar Transistor Pro duction specification 2SA812 ELECTRIC AL CHARACTERISTICS @ Ta=25℃ unless ot herwise specified Parameter Collector-b ase breakdown voltage Collector-emitter www.DataSheet4U.com breakdown.
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