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2MBI100S-120 Module Datasheet |
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| Part Number | 2MBI100S-120 |
| Description | IGBT Module |
| Manufacture | Fuji |
| Total Page | 4 Pages |
| Datasheet |
2MBI 100S-120
2-Pack IGBT
1200V
2x100A
IGBT MODULE ( S-Series )
â– Features
• NPT-Technology
• Square SC SOA at 10 x IC
• High Short Circuit Withstand-Capability
• Small Temperature Dependence of the Turn-Off
Switching Loss
• Low Losses And Soft Switching
www.DataSheetâ– 4U.cAompplications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
â– Outline Drawing
â– Maximum Ratings and Characteristics
â– Equivalent Circuit
• Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings Units
Collector-Emitter Voltage
Gate -Emitter Voltage
VCES
VGES
1200
± 20
V
Continuous
Collector
1ms
Current
Continuous
1ms
Max. Power Dissipation
Operating Temperature
Storage Temperature
25°C / 80°C
25°C / 80°C
IC
IC PULSE
-IC
-IC PULSE
PC
Tj
Tstg
150 / 100
300 / 200
100
200
780
+150
-40 ∼ +125
A
W
°C
Isolation Voltage A.C. 1min.
Screw Torque
Vis
Mounting 1*
Terminals 2*
2500
3.5
4.5
V
Nm
Note: 1*: Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6)
2*: Recommendable Value; 3.5 ∼ 4.5 Nm (M6)
• Electrical Characteristics ( at Tj=25°C )
Items
Symbols
Test Conditions
Zero Gate Voltage Collector Current
ICES
VGE=0V VCE=1200V
Gate-Emitter Leackage Current
IGES
VCE=0V VGE=± 20V
Gate-Emitter Threshold Voltage
VGE(th)
VGE=20V IC=100mA
Collector-Emitter Saturation Voltage
VCE(sat)
VGE=15V IC=100A
Tj = 25°C
Tj =125°C
Input Capacitance
Cies
VGE=0V
Output Capacitance
Coes
VCE=10V
Reverse Transfer Capacitance
Cres
f=1MHz
tON VCC = 600V
Turn-on Time
tr,x IC = 100A
tr,i VGE = ±15V
tOFF
RG = 9.1Ω
Turn-off Time
tf Inductive Load
Diode Forward On-Voltage
Reverse Recovery Time
VF IF=100A
trr IF=100A
Tj = 25°C
Tj =125°C
Min.
5.5
Typ.
7.2
2.3
2.8
12000
2500
2200
0.35
0.25
0.10
0.45
0.08
Max.
2.0
400
8.5
2.6
1.2
0.6
1.0
0.3
2.3 3.0
2.0
350
Units
mA
nA
V
pF
µs
V
ns
• Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
0.025
Max.
0.16
0.33
Units
°C/W
MS5F 4952 2001-02-21
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2MBI 100S-120
2-Pack IGBT
1200V
2x100A
www.DataSheet4U.com
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| Features | 2MBI 100S-120 IGBT MODULE ( S-Series ) ⠖ Features • NPT-Technology • Squa re SC SOA at 10 x IC • High Short Cir cuit Withstand-Capability • Small Tem perature Dependence of the Turn-Off Swi tching Loss • Low Losses And Soft Swi tching www.DataSheet4U.com 2-Pack IGBT 1200V 2x100A ■Outline Drawing ■Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supp ly ■Maximum Ratings and Characteris tics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitte r Voltage Continuous Collector 1ms Curr ent Continuous 1ms Max. Power Dissipati on Operating Temperature Storage Temper ature Isolation Voltage A.C. 1min. Scre w Torque ( Tc=25°C) Symbols VCES VGES 25°C / 80°C IC 25°C / 80°C IC PULSE -IC -IC PULSE PC Tj Tstg Vis Mounting 1* Terminals 2* ( at Tj=25°C ) Symbols Ratings 1200 ± 20 150 / 100 300 / 200 100 200 780 +150 -40 ∼ +125 2500 3.5 4.5 Units V ■Equivalent Circuit A W °C V Nm Note: 1*: Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or. |
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