2MBI100S-120 Module Datasheet

2MBI100S-120 Datasheet, PDF, Equivalent


Part Number

2MBI100S-120

Description

IGBT Module

Manufacture

Fuji

Total Page 4 Pages
Datasheet
Download 2MBI100S-120 Datasheet


2MBI100S-120
2MBI 100S-120
2-Pack IGBT
1200V
2x100A
IGBT MODULE ( S-Series )
Features
NPT-Technology
Square SC SOA at 10 x IC
High Short Circuit Withstand-Capability
Small Temperature Dependence of the Turn-Off
Switching Loss
Low Losses And Soft Switching
www.DataSheet4U.cAompplications
High Power Switching
A.C. Motor Controls
D.C. Motor Controls
Uninterruptible Power Supply
Outline Drawing
Maximum Ratings and Characteristics
Equivalent Circuit
Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings Units
Collector-Emitter Voltage
Gate -Emitter Voltage
VCES
VGES
1200
± 20
V
Continuous
Collector
1ms
Current
Continuous
1ms
Max. Power Dissipation
Operating Temperature
Storage Temperature
25°C / 80°C
25°C / 80°C
IC
IC PULSE
-IC
-IC PULSE
PC
Tj
Tstg
150 / 100
300 / 200
100
200
780
+150
-40 +125
A
W
°C
Isolation Voltage A.C. 1min.
Screw Torque
Vis
Mounting 1*
Terminals 2*
2500
3.5
4.5
V
Nm
Note: 1*: Recommendable Value; 2.5 3.5 Nm (M5) or (M6)
2*: Recommendable Value; 3.5 4.5 Nm (M6)
Electrical Characteristics ( at Tj=25°C )
Items
Symbols
Test Conditions
Zero Gate Voltage Collector Current
ICES
VGE=0V VCE=1200V
Gate-Emitter Leackage Current
IGES
VCE=0V VGE=± 20V
Gate-Emitter Threshold Voltage
VGE(th)
VGE=20V IC=100mA
Collector-Emitter Saturation Voltage
VCE(sat)
VGE=15V IC=100A
Tj = 25°C
Tj =125°C
Input Capacitance
Cies
VGE=0V
Output Capacitance
Coes
VCE=10V
Reverse Transfer Capacitance
Cres
f=1MHz
tON VCC = 600V
Turn-on Time
tr,x IC = 100A
tr,i VGE = ±15V
tOFF
RG = 9.1
Turn-off Time
tf Inductive Load
Diode Forward On-Voltage
Reverse Recovery Time
VF IF=100A
trr IF=100A
Tj = 25°C
Tj =125°C
Min.
5.5
Typ.
7.2
2.3
2.8
12000
2500
2200
0.35
0.25
0.10
0.45
0.08
Max.
2.0
400
8.5
2.6
1.2
0.6
1.0
0.3
2.3 3.0
2.0
350
Units
mA
nA
V
pF
µs
V
ns
Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
0.025
Max.
0.16
0.33
Units
°C/W
MS5F 4952 2001-02-21

2MBI100S-120
2MBI 100S-120
2-Pack IGBT
1200V
2x100A
www.DataSheet4U.com


Features 2MBI 100S-120 IGBT MODULE ( S-Series ) Features • NPT-Technology • Squa re SC SOA at 10 x IC • High Short Cir cuit Withstand-Capability • Small Tem perature Dependence of the Turn-Off Swi tching Loss • Low Losses And Soft Swi tching www.DataSheet4U.com 2-Pack IGBT 1200V 2x100A ■ Outline Drawing ■ Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supp ly ■ Maximum Ratings and Characteris tics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitte r Voltage Continuous Collector 1ms Curr ent Continuous 1ms Max. Power Dissipati on Operating Temperature Storage Temper ature Isolation Voltage A.C. 1min. Scre w Torque ( Tc=25°C) Symbols VCES VGES 25°C / 80°C IC 25°C / 80°C IC PULSE -IC -IC PULSE PC Tj Tstg Vis Mounting 1* Terminals 2* ( at Tj=25°C ) Symbols Ratings 1200 ± 20 150 / 100 300 / 200 100 200 780 +150 -40 ∼ +125 2500 3.5 4.5 Units V ■ Equivalent Circuit A W °C V Nm Note: 1*: Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or.
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