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LL41

General Semiconductor

Schottky Diodes

LL41 Schottky Diodes MiniMELF FEATURES ♦ For general purpose applications. ♦ This diode features low turn-on ∅ .063 (1....


General Semiconductor

LL41

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Description
LL41 Schottky Diodes MiniMELF FEATURES ♦ For general purpose applications. ♦ This diode features low turn-on ∅ .063 (1.6) .055 (1.4) Cathode Mark voltage and high breakdown voltage. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. case with type designation BAT41. .142 (3.6) .134 (3.4) .019 (0.48) .011 (0.28) ♦ This diode is also available in the DO-35 Dimensions in inches and (millimeters) MECHANICAL DATA Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb = 25 °C Repetitive Peak Forward Current at tp < 1 s, @ < 0.5, Tamb = 25 °C Surge Forward Current at tp = 10 ms, Tamb = 25 °C Power Dissipation, Tamb = 25 °C Junction Temperature Ambient Operating Temperature Range Storage Temperature Range 1) Value 100 1001) 3501) 7501) 4001) 125 –65 to +125 –65 to +150 Unit V mA mA mA mW °C °C °C VRRM IF IFRM ISFM Ptot Tj Tamb TS Valid provided that electrodes are kept at ambient temperature. 4/98 LL41 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Test Conditions Reverse Breakdown Voltage tested with 100 µA / 300 µs Pulses Forward Voltage Pulse Test tp = 300 µs at IF = 1 mA at IF = 200 mA Leakage Current Pulse Test tp = 300 µs at VR = 50 V, at Tj = 25 °C at VR = 50 V, at Tj...




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