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2N5882 Datasheet, Equivalent, High-Power Transistor.Silicon NPN High-Power Transistor Silicon NPN High-Power Transistor |
| Part | 2N5882 |
|---|---|
| Description | Silicon NPN High-Power Transistor |
| Feature | ON Semiconductort
Silicon NPN High-Powe r Transistor
. . . designed for general –purpose power amplifier and switchin g applications. 2N5882 ON Semiconducto r Preferred Device • Collector–Emi tter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) • DC Current Gain — h FE = 20 (Min) @ IC = 6. 0 Adc www. DataSh eet4U. com • Low Collector — Emitter Saturation Voltage — VCE(sat) = 1. 0 Vdc (Max) @ IC = 7. 0 Adc • High Curre nt — Gain–Bandwidth Product — fT = 4. 0 MHz (Min) @ IC = 1. 0 Adc MAXIMUM RATINGS (1) Collector–Emitter Voltage Collector–Base Voltage Emitter–Bas e Voltage 15 AMPERE SILICON POWER TRAN SISTOR . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | 2N5882 |
|---|---|
| Description | Silicon NPN High-Power Transistor |
| Feature | ON Semiconductort
Silicon NPN High-Powe r Transistor
. . . designed for general –purpose power amplifier and switchin g applications. 2N5882 ON Semiconducto r Preferred Device • Collector–Emi tter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) • DC Current Gain — h FE = 20 (Min) @ IC = 6. 0 Adc www. DataSh eet4U. com • Low Collector — Emitter Saturation Voltage — VCE(sat) = 1. 0 Vdc (Max) @ IC = 7. 0 Adc • High Curre nt — Gain–Bandwidth Product — fT = 4. 0 MHz (Min) @ IC = 1. 0 Adc MAXIMUM RATINGS (1) Collector–Emitter Voltage Collector–Base Voltage Emitter–Bas e Voltage 15 AMPERE SILICON POWER TRAN SISTOR . |
| Manufacture | ON Semiconductor |
| Datasheet |
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