2SD5702. D5702 Datasheet

D5702 2SD5702. Datasheet pdf. Equivalent

Part D5702
Description 2SD5702
Feature Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD5702 DESCRIPTION ¡.
Manufacture ETC
Datasheet
Download D5702 Datasheet

www.DataSheet4U.com NEC's 2.4 GHz Si LD MOS POWER AMPLIFIER D5702 Datasheet
Inchange Semiconductor Product Specification Silicon NPN P D5702 Datasheet
Recommendation Recommendation Datasheet D5702 Datasheet





D5702
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD5702
DESCRIPTION
With TO-3P(H)IS package
Built-in damper diode
High voltage ,high speed
APPLICATIONS
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output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
800
6
6
16
60
150
-55~150
UNIT
V
V
V
A
A
W



D5702
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A
VBEsat
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ICBO
Base-emitter saturation voltage
Collector cut-off current
IC=4A; IB=0.8A
VCB=800V; IE=0
IEBO Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
fT Transition frequency
IC=1A ; VCE=10V
VF Diode forward voltage
tf Fall time
IF=6A
IC=4A ;IB1=0.8A;IB2=-1.6A
VCC=200V; RL=50
Product Specification
2SD5702
MIN TYP. MAX UNIT
2.0 5.0
V
1.5 V
10 A
40 200 mA
10 30
5 15
3 MHz
2.0 V
0.4 s
2





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