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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD5702
DESCRIPTION ¡¤ With TO-3P(H)IS package ¡¤ Built-in damper diode ¡¤ High voltage ,high speed APPLICATIONS ¡¤ For color display horizontal deflection www.DataSheet4U.com output applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol
¡¤
Absolute maximum ratings (Ta=25¡æ )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25¡æ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 6 16 60 150 -55~150 ¡æ ¡æ UNIT V V V A A W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Diode forward voltage Fall time CONDITIONS IC=4A ;IB=0.8A IC=4A; IB=0.8A VCB=800V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=3A ; VCE=5V IC=1A ; VCE=10V IF=6A IC=4A ;IB1=0.8A;IB2=-1.6A VCC=200V; RL=50¦¸ 40 10 5 3 MIN
2SD5702
SYMBOL VCEsat VBEsat
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TYP. 2.0
MAX 5.0 1.5 10 200 30 15
UNIT V V ¦Ì A mA
ICBO IEBO hFE-1 hFE-2 fT VF tf
MHz 2.0 0.4 ¦Ì V s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD5702
www.DataSheet4U.com
R O T U D N O C I EM S E G N A INCH
Fig.2 Outline dimensions (unindicated tolerance:¡À 0.15 mm)
3
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