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LL42 Dataheets PDF



Part Number LL42
Manufacturers General Semiconductor
Logo General Semiconductor
Description Schottky Diodes
Datasheet LL42 DatasheetLL42 Datasheet (PDF)

LL42, LL43 Schottky Diodes MiniMELF FEATURES ♦ For general purpose applications. ♦ These diodes feature very low turn∅ .063 (1.6) .055 (1.4) Cathode Mark on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. with type designations BAT42 to BAT43 and in the SOD-123 case with type designations BAT42W to BAT43W. .142 (3.6) .134 (3.4) .019 (0.48) .011 (0.28) ♦ These diodes are also available in the DO.

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LL42, LL43 Schottky Diodes MiniMELF FEATURES ♦ For general purpose applications. ♦ These diodes feature very low turn∅ .063 (1.6) .055 (1.4) Cathode Mark on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. with type designations BAT42 to BAT43 and in the SOD-123 case with type designations BAT42W to BAT43W. .142 (3.6) .134 (3.4) .019 (0.48) .011 (0.28) ♦ These diodes are also available in the DO-35 case Dimensions in inches and (millimeters) MECHANICAL DATA Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb = 25 °C Repetitive Peak Forward Current at tp < 1 s, δ < 0.5, Tamb = 25 °C Surge Forward Current at tp < 10 ms, Tamb = 25 °C Power Dissipation at Tamb = 65 °C Junction Temperature Ambient Operating Temperature Range Storage Temperature Range 1) Value 30 2001) 5001) 41) 2001) 125 –55 to +125 –65 to +150 Unit V mA mA A mW °C °C °C V RRM IF IFRM IFSM Ptot Tj Tamb TS Valid provided that electrodes are kept at ambient temperature. 4/98 LL42, LL43 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Reverse Breakdown Voltage tested with 100 µA Pulses Forward Voltage Pulse Test tp < 300 µs, δ < 2% at IF = 200 mA at IF = 10 mA at IF = 50 mA at IF = 2 mA at IF = 15mA Leakage Current Pulse Test tp < 300 µs, δ < 2% at VR = 25 V at VR = 25 V, Tj = 100 °C Capacitance at VR = 1 V, f = 1 MHz Reverse Recovery Time from IF = 10 mA through IR = 10 mA to IR = 1 mA, RL = 100 Ω Rectification Efficiency at RL = 15 KΩ, CL = 300 pF, f = 45 MHz, VRF = 2 V Thermal Resistance Junction to Ambient Air 1) Min. 30 Typ. – Max. – Unit V V(BR)R LL42 LL42 LL43 LL43 VF VF VF VF VF – – – 0.26 – – – – – – 1 0.4 0.65 0.33 0.45 V V V V V IR IR Ctot trr – – – – – – 7 – 0.5 100 – 5 µA µA pF ns ηv 80 – – % RthJA – – 0.31) K/mW Valid provided that electrodes are kept at ambient temperature. .


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