isc Silicon NPN Power Transistors
INCHANGE Semiconductor
2SD5702
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (M...
isc Silicon
NPN Power
Transistors
INCHANGE Semiconductor
2SD5702
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed
·High Reliability
·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection circuits of
colour TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
800
V
6
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
16
A
60
W
150
℃
-55~150 ℃
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isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SD5702
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.0A; IB= 0.8A
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 4.0A; IB= 0.8A
1.5
V
IEBO
Emitter Cutoff Current
VEB= 4V; IC=0
40
200 mA
ICBO
Collector-Base Cutoff Current
VCB=800V; IE= 0
10
uA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
10
30
hFE-2
DC Current Gain
IC= 3A ; VCE= 5V
5
15
fT
Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V
3
MHz
VECF
C-E Diode Forward Voltage
tf
Fall Time
IF= 6A
IC= 4A, IB1= 0.8A; IB2= -1.6A RL= 50...