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2SD5702
Silicon NPN Power Transistors
Description
isc Silicon
NPN
Power
Transistor
s INCHANGE Semiconductor 2SD5702 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers....
Inchange
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