N-Channel MOSFET
AP3302H/J
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Simple Drive Requirement
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N-CHANNEL ...
Description
AP3302H/J
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Simple Drive Requirement
www.DataSheet4U.com
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
25V 50mΩ 16A
▼ Fast Switching
G S
Description
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP3302J) is available for low-profile applications.
G D S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 25 ± 20 16 10 25 20 0.16 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 6.4 110 Unit ℃/W ℃/W
Data & specifications subject to change without notice
200701031
AP3302H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th)
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Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
Test Conditions VGS=0V, ID=250uA
2
Min. 25 2 ...
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