IRS2609DSPBF

June 18, 2008 IRS2609DSPbF HALF-BRIDGE DRIVER Features Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage – dV/dt immune www.DataSheet4U.com Gate drive supply range from 10 V to 20 V Undervoltage lockout for both channels 3.3 V, 5 V and 15 V input logic compatible Cross-conduction prevention logic Matched propagation delay for both channels High side output in phase with IN input Internal 530 ns dead-time Lower di/dt gate driver for better noise immunity Shut down input turns off both channels Integrated bootstrap diode RoHS compliant Packages 8-Lead SOIC Product Summary VOFFSET IO+/VOUT ton/off (typ.) Dead Time 600 V max. 120 mA / 250 mA 10 V – 20 V 750 ns & 200 ns 530 ns Description The IRS2609D is a high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with Standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V. Applications: *Air Conditioner *Micro/Mini Inverter Drives *General Purpose Inverters *Motor Control Typical Connection www.irf.com 1 IRS2609DSPbF...