LL6263

LL5711 and LL6263 Schottky Diodes Features For general purpose applications Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. This diode is also available in the DO-35 case with type designation 1N5711 and 1N6263. MiniMELF (SOD-80C) Cathode Band .063 (1.6) Dia. .051 (1.3) .146 (3.7) .130 (3.3) .019 (0.48) .011 (0.28) Mechanical Data Case: MiniMELF Glass Case (SOD-80C) Weight: approx. 0.05g Cathode Band Color: Green Packaging Codes/Options: D1/10K per 13” reel (8mm tape), 20K/box D2/2.5K per 7” reel (8mm tape), 20K/box Dimensions in inches and (millimeters) Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Peak Inverse Voltage Power Dissipation (Infinite Heatsink) Maximum Single Cycle Surge 10µs Square Wave Junction Temperature Storage Temperature Range LL5711 LL6263 Symbol VRRM Ptot IFSM Tj TS Value 70 60 400(1) 2.0 125 –55 to +150 Unit V mW A °C °C Electrical Characteristics (T Parameter Reverse Breakdown Voltage Leakage Current Forward Voltage Drop Junction Capacitance Reverse Recovery Time LL5711 LL6263 J = 25°C unless otherwise noted) Symbol V(BR)R IR VF Ctot trr Test Condition IR = 10µA VR = 50V IF = 1.0mA IF = 15mA VR = 0V, f = 1MHz IF = IR = 5mA, recover to 0.1IR M...