LLE16120X

DISCRETE SEMICONDUCTORS DATA SHEET LLE16120X NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Interdigitated structure provides high emitter efficiency Gold metallization realizes very good stability of the characteristics and excellent lifetime Multicell geometry gives good balance of dissipated power and low thermal resistance Internal input prematching ensures good stability and allows an easier design of wideband circuits. APPLICATIONS Intended for use in common emitter, class AB power amplifiers in CW conditions for professional applications at 1.65 GHz. 2 LLE16120X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION Class AB (CW) f (GHz) 1.65 VCE (V) 24 ICQ (A) 0.1 PL1 (W) ≥11 Gpo (dB) ≥8.7 Zi; ZL (Ω) see Figs 8 and 9 PINNING - SOT437A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION handbook, 4 columns 1 c b 3 e DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange. Top view MAM112 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entir...