F11NM80

STB11NM80 - STF11NM80 STP11NM80 - STW11NM80 N-channel 800 V - 0.35 Ω - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh™ Power MOSFET Features www.DataSheet4U.com Type VDSS 800 V 800 V 800 V RDS(on) < 0.40 Ω < 0.40 Ω < 0.40 Ω < 0.40 Ω RDS(on)*Qg 14Ω*nC 14Ω*nC 14Ω*nC 14Ω*nC ID 11 A 11 A 11 A 11 A 3 1 STB11NM80 STF11NM80 STP11NM80 TO-247 D²PAK STW11NM80 800 V ■ ■ ■ Low input capacitance and gate charge Low gate input resistance Best RDS(on) *Qg in the industry 3 1 2 3 1 2 TO-220 TO-220FP Application ■ Switching applications Figure 1. Internal schematic diagram Description The MDmesh™ associates the multiple drain process with the Company’s PowerMesh™ horizontal layout assuring an outstanding low onresistance. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. Table 1. Device summary Marking B11NM80 F11NM80 P11NM80 W11NM80 Package D²PAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube Order codes STB11NM80 STF11NM80 STP11NM80 STW11NM80 December 2007 Rev 9 1/17 www.st.com 17 Contents STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 www.DataSheet4U.c...