Document
STB11NM80 - STF11NM80 STP11NM80 - STW11NM80
N-channel 800 V - 0.35 Ω - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh™ Power MOSFET
Features
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Type
VDSS 800 V 800 V 800 V
RDS(on) < 0.40 Ω < 0.40 Ω < 0.40 Ω < 0.40 Ω
RDS(on)*Qg 14Ω*nC 14Ω*nC 14Ω*nC 14Ω*nC
ID 11 A 11 A 11 A 11 A
3 1
STB11NM80 STF11NM80 STP11NM80
TO-247
D²PAK
STW11NM80 800 V
■ ■ ■
Low input capacitance and gate charge Low gate input resistance Best RDS(on) *Qg in the industry
3 1 2
3 1 2
TO-220
TO-220FP
Application
■
Switching applications
Figure 1.
Internal schematic diagram
Description
The MDmesh™ associates the multiple drain process with the Company’s PowerMesh™ horizontal layout assuring an outstanding low onresistance. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
Table 1.
Device summary
Marking B11NM80 F11NM80 P11NM80 W11NM80 Package D²PAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube
Order codes STB11NM80 STF11NM80 STP11NM80 STW11NM80
December 2007
Rev 9
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Contents
STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
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3
Test circuit
................................................ 9
4 5 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
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STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value Symbol Parameter TO-220/D²PAK/ TO-247 VDS Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor VISO TJ Tstg Insulation withstand voltage (DC) Operating junction temperature Storage temperature 11 8 44 150 1.2 --65 to 150 800 ±30 11 (1) 8 (1) 44 (1) 35 0.28 2500 Unit TO-220FP V V A A A W W/°C V °C
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VGS ID ID IDM(2) PTOT
1. Limited only by the maximum temperature allowed 2. Pulse width limited by safe operating area
Table 3.
Thermal data
Value
Symbol
Parameter
TO-220/D²PAK/ TO-247
Unit TO-220FP 3.6 °C/W °C/W °C
Rthj-case Rthj-a Tl
Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose
0.83 62.5 300
Table 4.
Symbol IAS EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50 V) Value 2.5 400 Unit A mJ
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Electrical characteristics
STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
2
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table 5.
Symbol V(BR)DSS
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 µA, VGS= 0 VDS = Max rating, VDS = Max rating @125°C VGS = ±30 V VDS= VGS, ID = 250 µA VGS= 10 V, ID= 5.5 A 3 4 0.35 Min. 800 10 100 100 5 0.40 Typ. Max. Unit V µA µA nA V Ω
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IDSS IGSS VGS(th) RDS(on)
Table 6.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS > ID(on) x RDS(on)max, ID= 7.5A VDS =25 V, f=1 MHz, VGS=0 VDD=640 V, ID = 11 A VGS =10 V (see Figure 10) f=1MHz Gate DC Bias=0 Test signal level=20 mV Open drain VDD=400 V, ID= 5.5 A, RG=4.7 Ω, VGS=10 V (see Figure 17) Min. Typ. 8 1630 750 30 43.6 11.6 21 Max. Unit S pF pF pF nC nC nC Ω
Gate input resistance
2.7
Turn-on delay time Rise time Turn-off delay time Fall time
22 17 46 15
ns ns ns ns
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
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STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
Electrical characteristics
Table 7.
Symbol ISD ISDM(1) VSD(2) trr Qrr
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Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD=11 A, VGS=0 ISD=11 A, di/dt = 100 A/µs, VDD=50 V, Tj=25 °C ISD=11 A, di/dt = 100 A/µs, VDD=50 V, Tj=150 °C 612 7.22 23.6 970 11.25 23.2 Test conditions Min Typ. Max 11 44 0.86 Unit.