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DISCRETE SEMICONDUCTORS
DATA SHEET
LLE16350X NPN microwave power transistor
Product specification Supersedes data of September 1994 1997 Feb 03
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. APPLICATIONS Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between 1.5 GHz and 1.8 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange.
Top view
handbook, 4 columns
LLE16350X
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION Class AB (CW) f (GHz) 1.65 VCE (V) 24 ICQ (A) 0.1 PL1 (W) ≥29 Gpo (dB) ≥8 ηC (%) Zi; ZL (Ω)
typ. 48 see Figs 8 and 9
PINNING - SOT437A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
1
c b
3
e
2
MAM112
Fig.1 Simplified outline and symbol.
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1997 Feb 03
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC Pi Ptot Tstg Tj Tsld Note 1. Up to 0.2 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage DC collector current input power total power dissipation storage temperature junction temperature soldering temperature t ≤ 10 s; note 1 Tmb = 75 °C CONDITIONS open emitter RBE = 220 Ω open base open collector
LLE16350X
MIN. − − − − −
MAX. 45 30 15 3 6 8 50 +150 200 235
UNIT V V V V A W W °C °C °C
f = 1.65 GHz; VCE = 24 V; class AB − − −65 − −
10
MBD760
60 P tot
MEA577
IC (A)
(W) 40
Ι ΙΙ
1
20
10 1 1 10
VCE (V)
10 2
0 0 50 100 150 200 T mb ( o C)
Tmb ≤ 75 °C. (I) Region of permissible DC operation. (II) Permissible extension provided RBE ≤ 220 Ω.
Fig.2 DC SOAR.
Fig.3 Power derating curve.
1997 Feb 03
3
Philips Semiconductors
Product specification
NPN microwave power transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tj = 100 °C
LLE16350X
VALUE max. 2 typ. 0.2
UNIT K/W K/W
CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO V(BR)CER V(BR)CBO V(BR)EBO hFE PARAMETER collector cut-off current collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage DC current gain CONDITIONS IE = 0; VCB = 20 V IC = 15 mA; RBE = 220 Ω IC = 15 mA IE = 15 mA IC = 1 A; VCE = 3 V − 30 45 3 15 MIN. MAX. 3 − − − 100 UNIT mA V V V
APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION Class AB (CW) f (GHz) 1.65 VCE (V) 24 ICQ (A) 0.1 PL1 (W) ≥29 typ. 32 Gpo (dB) ≥8 typ. 9 ηC (%) typ. 48 Zi; ZL (Ω) see Figs 8 and 9
1997 Feb 03
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16350X
handbook, full pagewidth
30
30
0.8 5.2 40
7.7 2.8 3.5
2.5 2.5 5.0
5.0 3.0 4.0
12.0 3.0
2.0
8.0 0.7 5.0 2.5 4.0 2.5
5.0 0.7 4.7 2.7 2.7
40
handbook, full pagewidth
input
,
C5 V BB F1 L1 C1 C2 Rr
MBD758
C6
VCC
L2
output
C4 C3
MBD759
The test circuit is split into two independent halves, each being 30 × 40 mm in size. Dimensions in mm. Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: εr = 10.
Fig.4 Prematching test circuit board.
1997 Feb 03
5
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE16350X
handbook, full pagewidth
BIAS CIRCUIT
PREMATCHING TEST CIRCUIT VCC
R1 TR1 C5 R2 F1 P1 D1 R3 C7 L1 DUT L2 C6
D2
MEA600
Fig.5 Class AB bias circuit.
List of components (see Figs 4 and 5) COMPONENT TR1 C1, C4 C2, C3 C5, C6 C7 D1 D2 L1 L2 P1 R1 R2 R3 F1 Rr Notes 1. In thermal contact with TR1. 2. In thermal contact with DUT. 1997 Feb 03 6 DESCRIPTION transistor, BDT91 or equivalent DC blocking chip capacitor trimmer capacitor feedthrough bypass capacitor electrolytic ca.