HMC-XDB112 DOUBLER Datasheet

HMC-XDB112 Datasheet, PDF, Equivalent


Part Number

HMC-XDB112

Description

GaAs MMIC PASSIVE FREQUENCY DOUBLER

Manufacture

Hittite Microwave Corporation

Total Page 6 Pages
Datasheet
Download HMC-XDB112 Datasheet


HMC-XDB112
v00.0907
Typical Applications
This HMC-XDB112 is ideal for:
2 • Point-to-Point Radios
• VSAT
• Test Instrumentation
• Military & Space
www.DataSheet4U.comClock Generation
HMC-XDB112
GaAs MMIC PASSIVE FREQUENCY
DOUBLER, 10 - 15 GHz INPUT
Features
Conversion Loss: 13 dB
Passive: No DC Bias Required
Input Drive: +13 dBm
High Fo Isolation: 30 dB
Die Size: 2.2 x 0.65 x 0.1 mm
Functional Diagram
General Description
The HMC-XDB112 is a monolithic Passive Frequency
Doubler which utilizes GaAs Heterojunction Bipolar
Transistor (HBT) technology, and is targeted to high
volume applications where frequency doubling of a
lower frequency is more economical than directly
generating a higher frequency. All bond pads and
the die backside are Ti/Au metallized and the HBT
devices are fully passivated for reliable operation. The
HMC-XDB112 Passive Doubler MMIC is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes.
Electrical Specifications*, TA = 25 °C, Pin = +13 dBm
Parameter
Min.
Frequency Range Input
Frequency Range Output
Conversion Loss
Fo Isolation with respect to output
*Unless otherwise indicated, all measurements are from probed die
Typ.
10 - 15
20 - 30
13
30
Max.
Units
GHz
GHz
dB
dB
2 - 68
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

HMC-XDB112
v00.0907
Conversion Loss
0
-2
-4
-6
-8
-10
-12
www.DataSheet4U.com-14
-16
-18
-20
10
11 12 13
FREQUENCY (GHz)
14
15
HMC-XDB112
GaAs MMIC PASSIVE FREQUENCY
DOUBLER, 10 - 15 GHz INPUT
Output Power
5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
10
Fin
2xFin
11 12 13 14
INPUT FREQUENCY (GHz)
15
2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 69


Features HMC-XDB112 v00.0907 GaAs MMIC PASSIVE F REQUENCY DOUBLER, 10 - 15 GHz INPUT Fea tures Conversion Loss: 13 dB Passive: N o DC Bias Required Input Drive: +13 dBm High Fo Isolation: 30 dB Die Size: 2.2 x 0.65 x 0.1 mm Typical Applications 2 FREQUENCY MULTIPLIERS - PASSIVE - CH IP This HMC-XDB112 is ideal for: • P oint-to-Point Radios • VSAT • Test Instrumentation • Military & Space w ww.DataSheet4U.com • Clock Generation Functional Diagram General Descripti on The HMC-XDB112 is a monolithic Passi ve Frequency Doubler which utilizes GaA s Heterojunction Bipolar Transistor (HB T) technology, and is targeted to high volume applications where frequency dou bling of a lower frequency is more econ omical than directly generating a highe r frequency. All bond pads and the die backside are Ti/Au metallized and the H BT devices are fully passivated for rel iable operation. The HMC-XDB112 Passive Doubler MMIC is compatible with conven tional die attach methods, as well as thermocompression and thermosonic w.
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