HMC-SDD112 GHz Datasheet

HMC-SDD112 Datasheet, PDF, Equivalent


Part Number

HMC-SDD112

Description

GaAs PIN MMIC SPDT SWITCH 55 - 86 GHz

Manufacture

Hittite Microwave Corporation

Total Page 3 Pages
Datasheet
Download HMC-SDD112 Datasheet


HMC-SDD112
v00.0907
Typical Applications
This HMC-SDD112 is ideal for:
• FCC E-Band Communication Systems
• Short-Haul / High Capacity Radios
• Automotive Radar
• Test & Measurement Equipment
www.DataSheet4U.com
• SATCOM
• Sensors
Functional Diagram
HMC-SDD112
GaAs PIN MMIC SPDT SWITCH
55 - 86 GHz
Features
Low Insertion Loss: 2 dB
High Isolation: 30 dB
DC Blocked RF I/Os
Integrated DC Bias Circuitry
Die Size: 2.01 x 0.975 x 0.1 mm
General Description
The HMC-SDD112 is a monolithic, GaAs PIN diode
based Single Pole Double Throw (SPDT) MMIC
Switch which exhibits low insertion loss and high
isolation. This all-shunt MMIC SPDT features
on-chip DC blocks and DC bias voltage decoupling
circuitry. All bond pads and the die backside are Ti/
Au metallized and the PIN diode devices are fully
passivated for reliable operation. The HMC-SDD112
GaAs PIN SPDT is compatible with conventional die
attach methods, as well as thermocompression and
thermosonic wirebonding, making it ideal for MCM and
hybrid microcircuit applications. All data shown herein
is measured with the chip in a 50 Ohm environment
and contacted with RF probes.
Electrical Specifications*, TA = +25 °C, with -5/+5V Control, 50 Ohm System
Parameter
Min. Typ. Max.
Frequency Range
55 - 86
Insertion Loss
23
Isolation
25 30
Return Loss ON State
12
Current (+5 V) ON State
22
Current (-5 V) OFF State
-63
* Unless otherwise indicated, all measurements are from probed die
Units
GHz
dB
dB
dB
mA
nA
0-2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

HMC-SDD112
v00.0907
“On” Insertion Loss vs. Freq. CTLA= -5V,
CTLB= 5V for RFOUT1 to be ON
HMC-SDD112
GaAs PIN MMIC SPDT SWITCH
55 - 86 GHz
“Off” Isolation vs. Freq. CTLA= +5V,
CTLB= -5V for RFOUT1 to be OFF
www.DataSheet4U.com
“On” Input Return Loss vs. Freq. CTLA= -5V,
CTLB= 5V for RFOUT1 to be ON
“On” Output Return Loss vs. Freq.
CTLA= -5V, CTLB= 5V for RFOUT1 to be ON
Note 1: Measured Performance Characteristics (Typical Performance at 25°C) Test data is taken with probes on RFIN and RFOUT1
with RFOUT2 left open.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
0-3


Features HMC-SDD112 v00.0907 GaAs PIN MMIC SPDT SWITCH 55 - 86 GHz Features Low Inserti on Loss: 2 dB High Isolation: 30 dB DC Blocked RF I/Os Integrated DC Bias Circ uitry Die Size: 2.01 x 0.975 x 0.1 mm Typical Applications This HMC-SDD112 is ideal for: • FCC E-Band Communicatio n Systems • Short-Haul / High Capacit y Radios SWITCH - CHIP • Automotive Radar • Test & Measurement Equipment • SATCOM • Sensors www.DataSheet4 U.com Functional Diagram General Desc ription The HMC-SDD112 is a monolithic, GaAs PIN diode based Single Pole Doubl e Throw (SPDT) MMIC Switch which exhibi ts low insertion loss and high isolatio n. This all-shunt MMIC SPDT features on -chip DC blocks and DC bias voltage dec oupling circuitry. All bond pads and th e die backside are Ti/ Au metallized an d the PIN diode devices are fully passi vated for reliable operation. The HMC-S DD112 GaAs PIN SPDT is compatible with conventional die attach methods, as wel l as thermocompression and thermosonic wirebonding, making it ideal for MCM.
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