86 GHz. HMC-SDD112 Datasheet

HMC-SDD112 GHz. Datasheet pdf. Equivalent


Hittite Microwave Corporation HMC-SDD112
v00.0907
Typical Applications
This HMC-SDD112 is ideal for:
• FCC E-Band Communication Systems
• Short-Haul / High Capacity Radios
• Automotive Radar
• Test & Measurement Equipment
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• SATCOM
• Sensors
Functional Diagram
HMC-SDD112
GaAs PIN MMIC SPDT SWITCH
55 - 86 GHz
Features
Low Insertion Loss: 2 dB
High Isolation: 30 dB
DC Blocked RF I/Os
Integrated DC Bias Circuitry
Die Size: 2.01 x 0.975 x 0.1 mm
General Description
The HMC-SDD112 is a monolithic, GaAs PIN diode
based Single Pole Double Throw (SPDT) MMIC
Switch which exhibits low insertion loss and high
isolation. This all-shunt MMIC SPDT features
on-chip DC blocks and DC bias voltage decoupling
circuitry. All bond pads and the die backside are Ti/
Au metallized and the PIN diode devices are fully
passivated for reliable operation. The HMC-SDD112
GaAs PIN SPDT is compatible with conventional die
attach methods, as well as thermocompression and
thermosonic wirebonding, making it ideal for MCM and
hybrid microcircuit applications. All data shown herein
is measured with the chip in a 50 Ohm environment
and contacted with RF probes.
Electrical Specifications*, TA = +25 °C, with -5/+5V Control, 50 Ohm System
Parameter
Min. Typ. Max.
Frequency Range
55 - 86
Insertion Loss
23
Isolation
25 30
Return Loss ON State
12
Current (+5 V) ON State
22
Current (-5 V) OFF State
-63
* Unless otherwise indicated, all measurements are from probed die
Units
GHz
dB
dB
dB
mA
nA
0-2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com


HMC-SDD112 Datasheet
Recommendation HMC-SDD112 Datasheet
Part HMC-SDD112
Description GaAs PIN MMIC SPDT SWITCH 55 - 86 GHz
Feature HMC-SDD112; HMC-SDD112 v00.0907 GaAs PIN MMIC SPDT SWITCH 55 - 86 GHz Features Low Insertion Loss: 2 dB High Is.
Manufacture Hittite Microwave Corporation
Datasheet
Download HMC-SDD112 Datasheet




Hittite Microwave Corporation HMC-SDD112
v00.0907
“On” Insertion Loss vs. Freq. CTLA= -5V,
CTLB= 5V for RFOUT1 to be ON
HMC-SDD112
GaAs PIN MMIC SPDT SWITCH
55 - 86 GHz
“Off” Isolation vs. Freq. CTLA= +5V,
CTLB= -5V for RFOUT1 to be OFF
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“On” Input Return Loss vs. Freq. CTLA= -5V,
CTLB= 5V for RFOUT1 to be ON
“On” Output Return Loss vs. Freq.
CTLA= -5V, CTLB= 5V for RFOUT1 to be ON
Note 1: Measured Performance Characteristics (Typical Performance at 25°C) Test data is taken with probes on RFIN and RFOUT1
with RFOUT2 left open.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
0-3



Hittite Microwave Corporation HMC-SDD112
v00.0907
Absolute Maximum Ratings
Bias Voltage Range
Storage Temperature
Operating Temperature
Bias Current (ON State)
-5.5 to 5.5 Vdc
-65 to +150 °C
-55 to +85 °C
30 mA
Control Voltages
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Low
High
Bias Condition
-5 V @ 63 nA typical
+5 V @ 22 mA typical
Outline Drawing
HMC-SDD112
GaAs PIN MMIC SPDT SWITCH
55 - 86 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Truth Table
Control Input
CTLA
CTLB
Low (-5V) High (+5V)
High (+5V) Low (-5V)
Signal Path State
RFIN to RFOUT1 RFIN to RFOUT2
On Off
Off On
0-4
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com







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