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HMC-SDD112 Data Sheet

GaAs PIN MMIC SPDT SWITCH 55 - 86 GHz

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HMC-SDD112
HMC-SDD112 v00.0907 GaAs PIN MMIC SPDT SWITCH 55 - 86 GHz Features Low Insertion Loss: 2 dB High Isolation: 30 dB DC Blocked RF I/Os Integrated DC Bias Circuitry Die Size: 2.01 x 0.975 x 0.1 mm Typical Applications This HMC-SDD112 is ideal for: • FCC E-Band Communication Systems • Short-Haul / High Capacity Radios SWITCH - CHIP • Automotive Radar • Test & Measurement Equipment • SATCOM • Sensors www.DataSheet4U.com Functional Diagram General Description The HMC-SDD112 is a monolithic, GaAs PIN diode based Single Pole Double Throw (SPDT) MMIC Switch which exhibits low insertion loss and high isolation. This all-shunt MMIC SPDT features on-chip DC blocks and DC bias voltage decoupling circuitry. All bond pads and the die backside are Ti/ Au metallized and the PIN diode devices are fully passivated for reliable operation. The HMC-SDD112 GaAs PIN SPDT is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM.
HMC-SDD112

Download HMC-SDD112 Datasheet
HMC-SDD112 v00.0907 GaAs PIN MMIC SPDT SWITCH 55 - 86 GHz Features Low Insertion Loss: 2 dB High Isolation: 30 dB DC Blocked RF I/Os Integrated DC Bias Circuitry Die Size: 2.01 x 0.975 x 0.1 mm Typical Applications This HMC-SDD112 is ideal for: • FCC E-Band Communication Systems • Short-Haul / High Capacity Radios SWITCH - CHIP • Automotive Radar • Test & Measurement Equipment • SATCOM • Sensors www.DataSheet4U.com Functional Diagram General Description The HMC-SDD112 is a monolithic, GaAs PIN diode based Single Pole Double Throw (SPDT) MMIC Switch which exhibits low insertion loss and high isolation. This all-shunt MMIC SPDT features on-chip DC blocks and DC bias voltage decoupling circuitry. All bond pads and the die backside are Ti/ Au metallized and the PIN diode devices are fully passivated for reliable operation. The HMC-SDD112 GaAs PIN SPDT is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations*, TA = +25 °C, with -5/+5V Control, 50 Ohm System Parameter Frequency Range Insertion Loss Isolation Return Loss ON State Current (+5 V) ON State Current (-5 V) OFF State * Unless otherwise indicated, all measurements are from probed die 25 Min. Typ. 55 - 86 2 30 12 22 -63 3 Max. Units GHz dB dB dB mA nA 0-2 For price, delivery.


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