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K50T60T

Infineon Technologies

IKW50N60T

TrenchStop Series www.DataSheet4U.com IKW50N60T q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft...


Infineon Technologies

K50T60T

File Download Download K50T60T Datasheet


Description
TrenchStop Series www.DataSheet4U.com IKW50N60T q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 50A VCE(sat),Tj=25°C 1.5V Tj,max 175°C Marking Code K50T60 Package TO-247 C G E P-TO-247-3-1 (TO-220AC) Type IKW50N60T Ordering Code Q67040S4718 Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) Diode forward current, limited by Tjmax TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time 2) Symbol VCE IC Value 600 801) 50 Unit V A ICpuls IF 150 150 100 50 IFpuls VGE tSC Ptot Tj Tstg - 150 ±20 5 333 -40...+175 -55...+175 260 V µs W °C VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Power dissipation TC = 25°C Operating...




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