IKW75N60T

IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Positive temperature coefficient in VCE(sat)  very tight parameter distribution  high ruggedness, temperature stable behaviour  very high switching speed  Low EMI  Very soft, fast recovery anti-parallel Emitter Controlled HE diode  Qualified according to JEDEC1) for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications:  Frequency Converters  Uninterrupted Power Supply C G E PG-TO247-3 Type IKW75N60T VCE 600V IC 75A VCE(sat),Tj=25°C 1.5V Tj,max 175C Marking K75T60 Package PG-TO247-3 Maximum Ratings Parameter Collector-emitter voltage, Tj ≥ 25C DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE = 600V, Tj = 175C, tp = 1µs Diode forward current, limited by Tjmax Diode pulsed current, tp limited by Tjmax TC = 25C TC = 100C Gate-emitter voltage Short circuit withstand time3) VGE = 15V, VCC  400V, Tj  150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Symbol VCE IC ICpuls - IF IFpuls VGE tSC Ptot Tj Tstg...