AT49SV12804

Features 1.65V - 1.95V Read/Write www.DataSheet4U.com High Performance – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture – Sixteen 4K Word Sectors with Individual Write Lockout – Two Hundred Fifty-four 32K Word Main Sectors with Individual Write Lockout Typical Sector Erase Time: 32K Word Sectors – 500 ms; 4K Word Sectors – 100 ms Thirty-two Plane Organization, Permitting Concurrent Read in Any of the Thirty-one Planes not Being Programmed/Erased Suspend/Resume Feature for Erase and Program – Supports Reading and Programming Data from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Word by Suspending Programming of Any Other Word Low-power Operation – 30 mA Active – 10 µA Standby VPP Pin for Write Protection and Accelerated Program/Erase Operations RESET Input for Device Initialization CBGA and TSOP Packages Seventeen 128-bit Protection Registers (2,176 Bits) Common Flash Interface (CFI) 128-megabit (8M x 16) Burst/Page Mode 1.8-volt Flash Memory AT49SN12804 AT49SV12804 Description The AT49SN/SV12804 is a 1.8-volt 128-megabit Flash memory. The memory is divided into multiple sectors and planes for erase operations. The AT49SN/SV12804 is organized as 8,388,608 x 16 bits. The device can be read or reprogrammed off a single 1.8V power supply, making it ideally suited for In-System programming. The device can be configure...