Flash Memory. AT49SV163D Datasheet

AT49SV163D Datasheet PDF, Equivalent


Part Number

AT49SV163D

Description

16-megabit 1M x 16) 1.8-volt Only Flash Memory

Manufacture

ATMEL Corporation

Total Page 30 Pages
PDF Download
Download AT49SV163D Datasheet PDF


AT49SV163D Datasheet
Features
Sinwgwlew.VDoalttaaSgheeeRt4eUa.dc/oWmrite Operation: 1.65V to 1.95V
Access Time – 80 ns
Sector Erase Architecture
– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
Fast Word Program Time – 10 µs
Fast Sector Erase Time – 100 ms
Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Word in the Non-suspending Sectors by Suspending
Programming of Any Other Word
Low-power Operation
– 10 mA Active
– 15 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
VPP Pin for Write Protection and Accelerated Program Operation
RESET Input for Device Initialization
Sector Lockdown Support
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Minimum 100,000 Erase Cycles
Common Flash Interface (CFI)
16-megabit
(1M x 16)
1.8-volt Only
Flash Memory
AT49SV163D
AT49SV163DT
1. Description
The AT49SV163D(T) is a 1.8-volt 16-megabit Flash memory organized as 1,048,576
words of 16 bits each. The memory is divided into 39 sectors for erase operations.
The device is offered in a 48-lead TSOP and a 48-ball CBGA package. The device
has CE and OE control signals to avoid any bus contention. This device can be read
or reprogrammed using a single power supply, making it ideally suited for in-system
programming.
The device powers on in the read mode. Command sequences are used to place the
device in other operation modes such as program and erase. The device has the
capability to protect the data in any sector (see “Sector Lockdown” on page 6).
To increase the flexibility of the device, it contains an Erase Suspend and Program
Suspend feature. This feature will put the erase or program on hold for any amount of
time and let the user read data from or program data to any of the remaining sectors
within the memory. The end of a program or an erase cycle is detected by the
READY/BUSY pin, Data Polling or by the toggle bit.
The VPP pin provides data protection. When the VPP input is below 0.4V, the program
and erase functions are inhibited. When VPP is at 1.65V or above, normal program
and erase operations can be performed. With VPP at 10.0V, the program (Dual-word
Program command) operation is accelerated.
3656A–FLASH–2/07

AT49SV163D Datasheet
www.DataSheet4U.com
A six-byte command (Enter Single Pulse Program Mode) sequence to remove the requirement
of entering the three-byte program sequence is offered to further improve programming time.
After entering the six-byte code, only single pulses on the write control lines are required for
writing into the device. This mode (Single Pulse Word Program) is exited by powering down
the device, or by pulsing the RESET pin low for a minimum of 500 ns and then bringing it back
to VCC. Erase, Erase Suspend/Resume and Program Suspend/Resume commands will not
work while in this mode; if entered they will result in data being programmed into the device. It
is not recommended that the six-byte code reside in the software of the final product but only
exist in external programming code.
2. Pin Configurations
Pin Name
A0 - A19
CE
OE
WE
RESET
RDY/BUSY
VPP
I/O0 - I/O15
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
READY/BUSY Output
Write Protection
Data Inputs/Outputs
No Connect
2.1 TSOP Top View (Type 1)
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
RESET
NC
VPP
RDY/BUSY
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48 A16
47 VCC
46 GND
45 I/O15
44 I/O7
43 I/O14
42 I/O6
41 I/O13
40 I/O5
39 I/O12
38 I/O4
37 VCC
36 I/O11
35 I/O3
34 I/O10
33 I/O2
32 I/O9
31 I/O1
30 I/O8
29 I/O0
28 OE
27 GND
26 CE
25 A0
2.2 CBGA Top View (Ball Down)
123456
A
A3 A7 RDY/BUSY WE A9 A13
B
A4 A17 VPP RST A8 A12
C
A2 A6 A18 NC A10 A14
D
A1 A5
NC A19 A11 A15
E
A0 I/O0 I/O2 I/O5 I/O7 A16
F
CE I/O8 I/O10 I/O12 I/O14 NC
G
OE I/O9 I/O11 VCC I/O13 I/015
H
VSS I/O1 I/O3 I/O4 I/O6 VSS
2 AT49SV163D(T)
3656A–FLASH–2/07


Features Datasheet pdf Features www.DataSheet4U.com • Single Voltage Read/Write Operation: 1.65V to 1.95V • Access Time – 80 ns • Sec tor Erase Architecture • • • • • • • • • • • • – Thirty-one 32K Word (64K Bytes) Se ctors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Prog ram Time – 10 µs Fast Sector Erase T ime – 100 ms Suspend/Resume Feature f or Erase and Program – Supports Readi ng and Programming from Any Sector by S uspending Erase of a Different Sector Supports Reading Any Word in the Non -suspending Sectors by Suspending Progr amming of Any Other Word Low-power Oper ation – 10 mA Active – 15 µA Stand by Data Polling, Toggle Bit, Ready/Busy for End of Program Detection VPP Pin f or Write Protection and Accelerated Pro gram Operation RESET Input for Device I nitialization Sector Lockdown Support T SOP and CBGA Package Options Top or Bot tom Boot Block Configuration Available 128-bit Protection Register Minimum 100,000 Erase Cycles Common Flash Interf.
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