AT49SV802AT

Features www.DataSheet4U.com Single Voltage Read/Write Operation: 1.65V to 1.95V Access Time – 90 ns Sector Erase Architecture – Fifteen 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Byte/Word Program Time – 12 µs Fast Sector Erase Time – 300 ms Suspend/Resume Feature for Erase and Program – Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/Word Low-power Operation – 12 mA Active – 13 µA Standby Data Polling, Toggle Bit, Ready/Busy for End of Program Detection RESET Input for Device Initialization Sector Lockdown Support TSOP and CBGA Package Options Top or Bottom Boot Block Configuration Available 128-bit Protection Register Minimum 100,000 Erase Cycles Common Flash Interface (CFI) Green (Pb/Halide-free) Packaging Option 8-megabit (512K x 16/ 1M x 8) 1.8-volt Only Flash Memory AT49SV802A AT49SV802AT Preliminary 1. Description The AT49SV802A(T) is a 1.8-volt 8-megabit Flash memory organized as 524,288 words of 16 bits each or 1,048,576 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 23 sectors for erase operations. The AT49SV802A(T) is offered in a 48-lead TSOP and a 48-ball CBGA package. The device has CE and OE control signals to avoid ...