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NSS1C200MZ4 Dataheets PDF



Part Number NSS1C200MZ4
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description PNP Transistor
Datasheet NSS1C200MZ4 DatasheetNSS1C200MZ4 Datasheet (PDF)

NSS1C200MZ4, NSV1C200MZ4 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as c.

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NSS1C200MZ4, NSV1C200MZ4 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current − Continuous Collector Current − Continuous Collector Current − Peak THERMAL CHARACTERISTICS Symbol VCEO VCBO VEBO IB IC ICM Max −100 −140 −7.0 1.0 2.0 3.0 Unit Vdc Vdc Vdc A A A Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient PD (Note 1) 800 mW 6.5 mW/°C RqJA (Note 1) 155 °C/W Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient PD (Note 2) RqJA (Note 2) 2.0 15.6 64 W mW/°C °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 7.6 mm2, 1 oz. copper traces. 2. FR−4 @ 645 mm2, 1 oz. copper traces. © Semiconductor Components Industries, LLC, 2013 March, 2013− Rev. 5 1 http://onsemi.com −100 VOLTS, 2.0 AMPS PNP LOW VCE(sat) TRANSISTOR COLLECTOR 2,4 1 BASE 3 EMITTER MARKING DIAGRAM SOT−223 AYW CASE 318E 1C200G STYLE 1 1 A Y W 1C200 G = Assembly Location = Year = Work Week = Specific Device Code = Pb−Free Package PIN ASSIGNMENT 4 C BCE 1 23 Top View Pinout ORDERING INFORMATION Device Package Shipping† NSS1C200MZ4T1G SOT−223 NSV1C200MZ4T1G (Pb−Free) 1000/ Tape & Reel NSS1C200MZ4T3G SOT−223 (Pb−Free) 4000/ Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number:.


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