Document
NSS1C200MZ4, NSV1C200MZ4
100 V, 2.0 A, Low VCE(sat) PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current − Continuous Collector Current − Continuous Collector Current − Peak THERMAL CHARACTERISTICS
Symbol
VCEO VCBO VEBO
IB IC ICM
Max
−100 −140 −7.0 1.0 2.0 3.0
Unit
Vdc Vdc Vdc
A A A
Characteristic
Symbol
Max Unit
Total Device Dissipation TA = 25°C Derate above 25°C
Thermal Resistance, Junction−to−Ambient
PD (Note 1)
800 mW 6.5 mW/°C
RqJA (Note 1)
155
°C/W
Total Device Dissipation TA = 25°C Derate above 25°C
Thermal Resistance, Junction−to−Ambient
PD (Note 2) RqJA (Note 2)
2.0 15.6
64
W mW/°C
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 7.6 mm2, 1 oz. copper traces. 2. FR−4 @ 645 mm2, 1 oz. copper traces.
© Semiconductor Components Industries, LLC, 2013
March, 2013− Rev. 5
1
http://onsemi.com
−100 VOLTS, 2.0 AMPS PNP LOW VCE(sat) TRANSISTOR
COLLECTOR 2,4
1 BASE
3 EMITTER
MARKING DIAGRAM
SOT−223
AYW
CASE 318E
1C200G
STYLE 1
1
A Y W 1C200
G
= Assembly Location = Year = Work Week = Specific Device Code
= Pb−Free Package
PIN ASSIGNMENT 4 C
BCE 1 23 Top View Pinout
ORDERING INFORMATION
Device
Package
Shipping†
NSS1C200MZ4T1G SOT−223 NSV1C200MZ4T1G (Pb−Free)
1000/ Tape & Reel
NSS1C200MZ4T3G SOT−223 (Pb−Free)
4000/ Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
Publication Order Number:.