IRFY430

www.DataSheet4U.com IRFY430M IRFY430M MECHANICAL DATA Dimensions in mm (inches) 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.92 10.41 10.67 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) 0.89 1.14 16.38 16.89 13.39 13.64 1 2 3 12.70 19.05 500V 3.7A 1.6W 2.54 BSC 2.65 2.75 FEATURES HERMETICALLY SEALED TO–220 METAL PACKAGE SIMPLE DRIVE REQUIREMENTS LIGHTWEIGHT TO–220M – Metal Package IRFY430 Pin 1 – Gate Pin 2 – Drain Pin 3 – Source SCREENING OPTIONS AVAILABLE ALL LEADS ISOLATED FROM CASE IRFY430M Pin 1 – Drain Pin 2 – Source Pin 3 – Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg TL RqJC Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case (VGS = 0 , Tcase = 25°C) (VGS = 0 , Tcase = 100°C) ±20V 3.7A 2.4A 14A 45W 0.36W/°C –55 to 150°C 300°C 1.67°C/W max. Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Prelim. 6/99 www.DataSheet4U.com IRFY430M IRFY430M ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter BVDSS STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage Test Conditions VGS = 0 ID = 1mA VGS = 10V VG...