P-Channel MOSFET
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IRFY9130
MECHANICAL DATA Dimensions in mm (inches)
4.70 5.00 0.70 0.90 3.56 Dia. 3.81
10.41 10.67...
Description
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IRFY9130
MECHANICAL DATA Dimensions in mm (inches)
4.70 5.00 0.70 0.90 3.56 Dia. 3.81
10.41 10.67
P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS
VDSS ID(cont) RDS(on)
FEATURES
0.89 1.14
16.38 16.89
13.39 13.64
1 2 3
12.70 19.05
-100V -9.3A 0.31Ω
10.41 10.92
2.54 BSC
2.65 2.75
HERMETICALLY SEALED TO–220 METAL PACKAGE SIMPLE DRIVE REQUIREMENTS
TO–220M – Metal Package
Pad 1 – Gate Pad 2 – Drain Pad 3 – Source
LIGHTWEIGHT SCREENING OPTIONS AVAILABLE ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS ID ID IDM PD TJ , Tstg RθJC RθJA Gate – Source Voltage Continuous Drain Current @ Tcase = 25°C Continuous Drain Current @ Tcase = 100°C Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient ±20V -9.3A -5.8A -37A 45W 0.36W/°C –55 to 150°C 2.8°C/W max. 80°C/W max.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/97
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IRFY9130
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
BVDSS ∆TJ RDS(on) STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage Breakdown Voltage Static Drain – Source On–State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitan...
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